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參數資料
| 型號： | KM29N32000IT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲器) |
| 中文描述： | 4米× 8位NAND閃存（4米× 8位的NAND閃速存儲器） |
| 文件頁數： | 7/26頁 |
| 文件大小： | 316K |
| 代理商： | KM29N32000IT |
KM29N32000T, KM29N32000IT
FLASH MEMORY
7
MODE SELECTION
NOTE
: 1. X can be V
IL
or V
IH
2. WP should be biased to CMOS high or CMOS low for standby.
3. When SE is high, spare area is deselected.
CLE
ALE
CE
WE
RE
SE
WP
Mode
H
L
L
H
X
X
Read Mode
Command Input
L
H
L
H
X
X
Address Input(3clock)
H
L
L
H
X
H
Write Mode
Command Input
L
H
L
H
X
H
Address Input(3clock)
L
L
L
H
L/H
(3)
H
Data Input
L
L
L
H
L/H
(3)
X
Sequential Read & Data Output
L
L
L
H
H
L/H
(3)
X
During Read(Busy)
X
X
X
X
X
L/H
(3)
H
During Program(Busy)
X
X
X
X
X
X
H
During Erase(Busy)
X
X
(1)
X
X
X
X
L
Write Protect
X
X
H
X
X
0V/V
CC
(2)
0V/V
CC
(2)
Stand-by
CAPACITANCE
(T
A
=25
°
C, V
CC
=5V, f=1.0MHz)
NOTE
: Capacitance is periodically sampled and not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input/Output Capacitance
C
I/O
V
IL
=0V
-
10
pF
Input Capacitance
C
IN
V
IN
=0V
-
10
pF
VALID BLOCK
NOTE
:
1.The KM29N32000 may or may not include bad blocks. Bad blocks are defined as blocks that contain one or more bad bits.
Do not try to access these bad blocks for program and erase. The Minimum valid blocks are guaranteed for 10 years data retention or 1M program
erase cycling. (Refer to the attached technical notes)
2. The 1st block, which is placed on 00h block address, is guaranteed to be a good block
Parameter
Symbol
Min
Typ.
Max
Unit
Valid Block Number
N
VB
502
508
511
Blocks
Program/Erase Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
t
PROG
-
0.25
1.5
ms
Number of Partial Program Cycles in the Same Page
Nop
-
-
10
cycles
Block Erase Time
t
BERS
-
2
10
ms
AC TEST CONDITION
(KM29N32000T:T
A
=0 to 70
°
C, KM29N32000IT:T
A
=-40 to 85
°
C, V
CC
=5V
±
10% unless otherwise noted)
Parameter
Value
Input Pulse Levels
0.4V to 2.6V
Input Rise and Fall Times
5ns
Input and Output Timing Levels
0.8V and 2.0V
Output Load
1 TTL GATE and CL=100pF
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