參數(shù)資料
型號: KM29N32000IT
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲器)
中文描述: 4米× 8位NAND閃存(4米× 8位的NAND閃速存儲器)
文件頁數(shù): 11/26頁
文件大小: 316K
代理商: KM29N32000IT
KM29N32000T, KM29N32000IT
FLASH MEMORY
11
Pointer Operation of KM29N32000
The KM29N32000 has three read modes to set the destination of the pointer. The pointer is set to "A" area by the "00h" command, to
"B" area by the "01" command, and to "C" area by the "50h" command. Table 1 shows the destination of the pointer, and figure 2
shows the block diagram of its operations.
Example of Pointer Operation programming
"A" area
(00h plane)
50h
"C" area
(1) "A" area program
"A" area
Address / Data input
256 Byte
Table 1. Destination of the pointer
Command
Pointer position
Area
00H
01H
50H
0 ~ 255 byte
256 ~ 511 byte
512 ~ 527 byte
1st half array(A)
2nd half array(B)
spare array(C)
"B" area
(01h plane)
"C" area
(50h plane)
256 Byte
16 Byte
"A"
"B"
"C"
Internal
Page Buffer
Pointer select
commnad
(00h, 01h, 50h)
Pointer
Figure 2. Block diagram of pointer Operation
Table 2. Pointer Status after each operation
* 01H command is valid just one time when it is used as a pointer for program/erase.
Operation
Pointer status after operation
Program/Erase
Reset
Power up
With previous 00H, Device is set to 00H Plane
With previous 01H, Device is set to 00H Plane*
With previous 50H, Device is set to 50H Plane
"00h" Plane("A" area)
"00h" Plane("A" area)
00h
80h
"A" area program
00h
"A" area
(2) "B" area program
"B" area
Address / Data input
01h
80h
"A" area program
00h
"A" area
(3) "C" area program
"C" area
Address / Data input
50h
80h
"C" area program
10h
80h
10h
10h
80h
10h
10h
80h
10h
Address / Data input
Address / Data input
Address / Data input
"A" area program
"B" area program
"C" area program
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