參數(shù)資料
型號(hào): KM29N32000IT
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲(chǔ)器)
中文描述: 4米× 8位NAND閃存(4米× 8位的NAND閃速存儲(chǔ)器)
文件頁(yè)數(shù): 20/26頁(yè)
文件大?。?/td> 316K
代理商: KM29N32000IT
KM29N32000T, KM29N32000IT
FLASH MEMORY
20
Figure 5. Sequential Row Read1 Operation
Figure 4. Read2 Operation
50H
A
0
~ A
3
& A
9
~ A
21
Data Output(Sequential)
Spare Field
CE
CLE
ALE
R/B
WE
1st half array 2nd half array
Data Field
Spare Field
(SE=L, 00H Command)
1st half array 2nd half array
Data Field
Spare Field
00H
01H
A
0
~ A
7
& A
9
~ A
21
I/O
0
~
7
R/B
Start Add.(3Cycle)
Start Add.(3Cycle)
Data Output
Data Output
Data Output
1st
2nd
Nth
(528 Byte)
(528 Byte)
(A
4
~ A
7
:
Don't Care)
1st
2nd
Nth
(SE=L, 01H Command)
1st half array 2nd half array
Data Field
Spare Field
1st
2nd
Nth
(SE=H, 00H Command)
1st half array 2nd half array
Data Field
Spare Field
1st
2nd
Nth
I/O
0
~
7
RE
t
R
t
R
t
R
t
R
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KM29N32000T 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲(chǔ)器)
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