參數(shù)資料
型號： KM29N32000IT
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲器)
中文描述： 4米× 8位NAND閃存（4米× 8位的NAND閃速存儲器）
文件頁數(shù)： 6/26頁
文件大?。?/td> 316K
代理商： KM29N32000IT
KM29N32000T, KM29N32000IT
FLASH MEMORY
6
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Operating
Current
Sequential Read
I
CC1
tcycle=50ns
CE=V
IL
, I
OUT
=0mA
-
15
30
mA
Command, Address Input
I
CC3
tcycle=50ns
-
15
30
mA
Data Input
I
CC4
-
-
15
30
mA
Program
I
CC6
-
-
15
30
mA
Erase
I
CC7
-
-
25
40
mA
Stand-by Current(TTL)
I
SB1
CE=V
IH
, WP=SE=0V/V
CC
-
-
1
mA
Stand-by Current(CMOS)
I
SB2
CE=V
CC
-0.2, WP=SE=0V/V
CC
-
10
100
μ
A
μ
A
μ
A
Input Leakage Current
I
LI
V
IN
=0 to 5.5V
-
-
±
10
±
10
Output Leakage Current
I
LO
V
OUT
=0 to 5.5V
-
-
Input High Voltage, All inputs
V
IH
-
2.0
-
V
CC
+0.5
V
Input Low Voltage, All inputs
V
IL
-
-0.3
-
0.8
V
Output High Voltage Level
V
OH
I
OH
=-400
μ
A
2.4
-
-
V
Output Low Voltage Level
V
OL
I
OL
=2.1mA
-
-
0.4
V
Output Low Current(R/B)
I
OL
(R/B)
V
OL
=0.4V
8
10
-
mA
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to V
SS
V
IN
-0.6 to +7.0
V
Temperature Under Bias
KM29N32000T
T
BIAS
-10 to +125
°
C
KM29N32000IT
-40 to +125
Storage Temperature
T
STG
-65 to +150
°
C
Short Circuit Output Current
I
OS
5
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, KM29N16000T
:
T
A
=0 to 70
°
C, KM29N16000IT
:
T
A
=-40 to 85
°
C)
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
V
CC
4.5
5.0
5.5
V
Supply Voltage
V
SS
0
0
0
V
相關(guān)PDF資料
PDF描述
KM29N32000T 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲器)
KM29N32000TS 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲器)
KM29U128IT 16M x 8 Bit NAND Flash Memory
KM29U128T 16M x 8 Bit NAND Flash Memory
KM29U64000IT 8M x 8 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
KM29U128IT 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
KM29U128T 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:16M x 8 Bit NAND Flash Memory
KM29U64000IT 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory
KM29U64000T 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:8M x 8 Bit NAND Flash Memory
KM29V16000AIT 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
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