參數(shù)資料
型號: KM29N32000IT
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲器)
中文描述: 4米× 8位NAND閃存(4米× 8位的NAND閃速存儲器)
文件頁數(shù): 17/26頁
文件大小: 316K
代理商: KM29N32000IT
KM29N32000T, KM29N32000IT
FLASH MEMORY
17
BLOCK ERASE OPERATION
(ERASE ONE BLOCK)
CE
CLE
R/B
I/O
0
~
7
WE
ALE
RE
60H
A
17
~ A
21
A
9
~ A
16
Auto Block Erase Setup Command
Erase Command
Read Status
Command
I/O0=1 Error in Erase
DOH
70H
I/O
0
Busy
t
WB
t
BERS
t
WC
t
WC
Block
Address
I/O0=0 Successful Erase
SUSPEND & RESUME OPERATION DURING BLOCK ERASE
CE
CLE
R/B
I/O
0
~
7
WE
ALE
RE
60H
A
17
~ A
21
A
9
~ A
16
Auto Block Erase Setup Command
Program/Read
Function are
Acceptable
D0H
70H
I/O
0
Busy
B0H
D0H
t
WB
Block Address
Resume
Suspend
t
WB
t
RHW
t
SR
I/O
0
=0 Successful Erase
I/O
0
=1 Error in Erase
相關PDF資料
PDF描述
KM29N32000T 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲器)
KM29N32000TS 4M x 8 Bit NAND Flash Memory(4M x 8位 NAND閃速存儲器)
KM29U128IT 16M x 8 Bit NAND Flash Memory
KM29U128T 16M x 8 Bit NAND Flash Memory
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