參數(shù)資料
型號： KFH1G16Q2M-DID6
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： CONN RCPT .100 100POS DL R/A AU
中文描述： 閃存（54MHz之間）
文件頁數(shù)： 54/93頁
文件大小： 1219K
代理商： KFH1G16Q2M-DID6
OneNAND512/OneNAND1GDDP
FLASH MEMORY
54
Copy-back Program Operation
The copy-back program is configured to quickly and efficiently rewrite data stored in one page by sector unit(1/2/3/4 sector) without
utilizing an external memory. Since the time-consuming cycles of serial access and re-loading cycles are removed, the system perfor-
mance is improved. The benefit is especially obvious when a portion of a block is updated and the rest of the block also need to be
copied to the newly assigned free block. The operation for performing a copy-back program is a sequential execution of page-read
without serial access and copying-program with the address of destination page.
Start
Write ’DFS*, FBA’ of Flash
Add: F100h DQ=DFS*, FBA
Write ’FPA, FSA’ of Flash
Add: F107h DQ=FPA, FSA
Write ’FCBA’ of Flash
Add: F102h DQ=FCBA
Write ’FCPA, FCSA’ of Flash
Add: F103h DQ=FCPA, FCSA
Copy back completed
Write ’Copy-back Program’
command
Add: F220h DQ=001Bh
Wait for INT register
low to high transition
Add: F241h DQ[15]=INT
Read Controller
Status Register
Add: F240h DQ[10]=WRc
DQ[10]=0
Copy back Error
YES
NO
Figure 15. Copy back program operation flow-chart
* DBS, DFS is for DDP
Note 1) Selected DataRAM by BSA & BSC is used for Copy back operation, so previous data is overwritten.
: If program operation results in an error, map out
the block including the page in error and copy the
target data to another block.
*
Select DataRAM for DDP
Add: F101h DQ=DBS*
Write 0 to interrupt register
Add: F241h DQ=0000h
Write ’BSA, BSC’ of DataRAM
Add: F200h DQ=BSA, BSC
1)
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