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參數(shù)資料
| 型號： | KFH1G16Q2M-DID6 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | CONN RCPT .100 100POS DL R/A AU |
| 中文描述： | 閃存（54MHz之間） |
| 文件頁數(shù)： | 24/93頁 |
| 文件大小： | 1219K |
| 代理商： | KFH1G16Q2M-DID6 |
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OneNAND512/OneNAND1GDDP
FLASH MEMORY
24
Buf.
Word
Address
Byte
Address
F
E
D
C
B
A
9
8
7
6
5
4
3
2
1
0
DataS 0_2
8020h
10040h
BI
8021h
10042h
Managed by Internal ECC logic
8022h
10044h
Reserved for the future use
Managed by Internal ECC logic
8023h
10046h
Reserved for the current and future use
8024h
10048h
ECC Code for Main area data (2
nd
)
ECC Code for Main area data (1
st
)
8025h
1004Ah
ECC Code for Spare area data (1
st
)
ECC Code for Main area data (3
rd
)
8026h
1004Ch
FFh(Reserved for the future use)
ECC Code for Spare area data (2
nd
)
8027h
1004Eh
Free Usage
DataS 0_3
8028h
10050h
BI
8029h
10052h
Managed by Internal ECC logic
802Ah
10054h
Reserved for the future use
Managed by Internal ECC logic
802Bh
10056h
Reserved for the current and future use
802Ch
10058h
ECC Code for Main area data (2
nd
)
ECC Code for Main area data (1
st
)
802Dh
1005Ah
ECC Code for Spare area data (1
st
)
ECC Code for Main area data (3
rd
)
802Eh
1005Ch
FFh(Reserved for the future use)
ECC Code for Spare area data (2
nd
)
802Fh
1005Eh
Free Usage
DataS 1_0
8030h
10060h
BI
8031h
10062h
Managed by Internal ECC logic
8032h
10064h
Reserved for the future use
Managed by Internal ECC logic
8033h
10066h
Reserved for the current and future use
8034h
10068h
ECC Code for Main area data (2
nd
)
ECC Code for Main area data (1
st
)
8035h
1006Ah
ECC Code for Spare area data (1
st
)
ECC Code for Main area data (3
rd
)
8036h
1006Ch
FFh(Reserved for the future use)
ECC Code for Spare area data (2
nd
)
8037h
1006Eh
Free Usage
DataS 1_1
8038h
10070h
BI
8039h
10072h
Managed by Internal ECC logic
803Ah
10074h
Reserved for the future use
Managed by Internal ECC logic
803Bh
10076h
Reserved for the current and future use
803Ch
10078h
ECC Code for Main area data (2
nd
)
ECC Code for Main area data (1
st
)
803Dh
1007Ah
ECC Code for Spare area data (1
st
)
ECC Code for Main area data (3
rd
)
803Eh
1007Ch
FFh(Reserved for the future use)
ECC Code for Spare area data (2
nd
)
803Fh
1007Eh
Free Usage
DataS 1_2
8040h
10080h
BI
8041h
10082h
Managed by Internal ECC logic
8042h
10084h
Reserved for the future use
Managed by Internal ECC logic
8043h
10086h
Reserved for the current and future use
8044h
10088h
ECC Code for Main area data (2
nd
)
ECC Code for Main area data (1
st
)
8045h
1008Ah
ECC Code for Spare area data (1
st
)
ECC Code for Main area data (3
rd
)
8046h
1008Ch
FFh(Reserved for the future use)
ECC Code for Spare area data (2
nd
)
8047h
1008Eh
Free Usage
Equivalent to 1word of NAND Flash
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KFH1G16U2M-DEB | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| KFH1G16U2M-DEB5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFH1G16U2M-DEB6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFH1G16U2M-DED | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| KFH1G16U2M-DED5 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
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