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參數(shù)資料
| 型號(hào)： | KFH1G16Q2M-DID6 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | CONN RCPT .100 100POS DL R/A AU |
| 中文描述： | 閃存（54MHz之間） |
| 文件頁(yè)數(shù)： | 10/93頁(yè) |
| 文件大?。?/td> | 1219K |
| 代理商： | KFH1G16Q2M-DID6 |
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OneNAND512/OneNAND1GDDP
FLASH MEMORY
10
DEFINITIONS
B (capital letter)
Byte, 8bits
W (capital letter)
Word, 16bits
b (lower-case letter)
Bit
ECC
Error Correction Code
Calculated ECC
ECC which has been calculated during load or program access
Written ECC
ECC which has been stored as data in the NAND Flash Array or in the BufferRAM
BufferRAM
On-chip Internal Buffer consisting of BootRAM and DataRAM
BootRAM
A 1KB portion of the BufferRAM reserved for Bootcode buffering
DataRAM
A 4KB portion of the BufferRAM reserved for Data buffering
Memory
NAND Flash array which is embedded on OneNAND
Sector
Partial unit of page, of which size is 512B for main area and 16B for spare area data.
It is the minimum Load/Program/Copy-Back program unit while one~four sector opera-
tion is available
Data unit
Possible data unit to be read from memory to BufferRAM or to be programmed to mem-
ory.
- 528B of which 512B is in main area and 16B in spare area
- 1056B of which 1024B is in main area and 32B in spare area
- 1584B of which 1536B is in main area and 48B in spare area
- 2112B of which 2048B is in main area and 64B in spare area
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| KFH1G16U2M-DEB | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY |
| KFH1G16U2M-DEB5 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFH1G16U2M-DEB6 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
| KFH1G16U2M-DED | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY |
| KFH1G16U2M-DED5 | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:FLASH MEMORY(54MHz) |
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