參數(shù)資料
型號(hào): KFH1G16Q2M-DID5
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: FLASH MEMORY(54MHz)
中文描述: 閃存(54MHz之間)
文件頁(yè)數(shù): 93/93頁(yè)
文件大?。?/td> 1219K
代理商: KFH1G16Q2M-DID5
OneNAND512/OneNAND1GDDP
FLASH MEMORY
93
ORDERING INFORMATION
K F X XX 1 6 X 2 M - X X B
Samsung
OneNAND Memory
Device Type
G : Single Chip
H : Die Stack
Density
12 : 512Mb
1G : 1Gb
Operating Temperature Range
E = Extended Temp. (-30
°
C to 85
°
C)
I = Industrial Temp. (-40
°
C to 85
°
C)
Page Architecture
2 : 2KB Page
Version
1st Generation
Product Line desinator
B : Include Bad Block
D : Daisy Sample
Operating Voltage Range
Q : 1.8V(1.7 V to 1.95V)
D : 2.65V(2.4 V to 2.9V)
U : 3.3V(2.7V to 3.6V)
Package
D : FBGA(Lead Free)
Organization
x16 Organization
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