OneNAND512/OneNAND1GDDP
FLASH MEMORY
3
Document Title
OneNAND
Revision History
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
Revision No.
0.0
0.0.1
0.0.2
0.0.3
0.1
0.1.1
0.2
0.3
Remark
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Preliminary
Draft Date
Jan. 07, 2004
Jan. 29, 2004
Jan. 30, 2004
Feb. 03, 2004
Feb.11, 2004
Mar.9, 2004
Mar. 22, 2004
Mar. 31, 2004
History
Initial issue.
1. Add the "Invalid block management" and "Error management in read and
write operation"
2. Add the restriction in addressing for program operation.
3. Add the asynchronous write and latched asynchronous write mode timing
diagram.
4.Define new parameters in asynchronous write mode.
-tCH1 : 10ns, tCH2 : 0ns
1. Add the dual operation diagram.
2. Add the block replacement diagram
1. Edit the block replacement diagram
2. Add the 3.3V product.
1. Excluded Cache Program Operation
2. Added the descriptions for below operations
-. Reset
-. Write Protection
-. Burst Read Latency
-. Dual Operation
-. Invalid block definition and Identification method
-. Error in write or read operation
-. ECC
3. Revised program sequence
4. Some AC parameters are changed.
tACH : 9ns-->7ns, tCES : 7ns-->9ns, tAAVDS : 5ns-->7ns
tDS : 30ns-->10ns, tDH : 0ns-->4ns
5. Define new AC parameter.
tAWES(Address hold time in AVD low case of asynchronous write mode)
Min. 0ns
1. Correct an errata
Ball pitch of package is corrected.
0.5mm --> 0.8mm
2. Edit the timing diagram of burst read wrap around.(Figure 23,24)
1. The specification of 2.7V device is added.
1. The specification of 3.3V device is deleted.
2. Correct some typos.