參數(shù)資料
型號(hào)： K9K8G08U1M
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
中文描述： 512M x 8位/ 1克× 8位NAND閃存
文件頁數(shù)： 9/41頁
文件大?。?/td> 1076K
代理商： K9K8G08U1M
FLASH MEMORY
9
Advance
K9F4G08U0M
K9K8G08U1M
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
NOTE
: 1. V
IL
can undershoot to -0.4V and V
IH
can overshoot to V
CC
+0.4V for durations of 20 ns or less.
2. Typical value is measured at Vcc=3.3V, T
A
=25
°
C. Not 100% tested.
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Operating
Current
Page Read with
Serial Access
I
CC
1
tRC=25ns
CE=V
IL,
I
OUT
=0mA
-
15
30
mA
Program
I
CC
2
-
Erase
I
CC
3
-
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=0V/V
CC
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2, WP=0V/V
CC
-
10
50
μ
A
Input Leakage Current
I
LI
V
IN
=0 to Vcc(max)
-
-
±10
Output Leakage Current
I
LO
V
OUT
=0 to Vcc(max)
-
-
±10
Input High Voltage
V
IH*
-
0.8xVcc
-
Vcc+0.3
V
Input Low Voltage, All inputs
V
IL*
-
-0.3
-
0.2xVcc
Output High Voltage Level
V
OH
K9F4G08U0M :I
OH
=-400
μ
A
2.4
-
-
Output Low Voltage Level
V
OL
K9F4G08U0M :I
OL
=2.1mA
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
K9F4G08U0M :V
OL
=0.4V
8
10
-
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F4G08U0M-XCB0
:
T
A
=0 to 70
°
C, K9F4G08U0M-XIB0
:
T
A
=-40 to 85
°
C)
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
V
CC
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to VSS
V
IN/OUT
-0.6 to +4.6
V
V
CC/
V
CCQ
-0.6 to +4.6
Temperature Under Bias
K9F4G08U0M-XCB0
T
BIAS
-10 to +125
°
C
K9F4G08U0M-XIB0
-40 to +125
Storage Temperature
K9F4G08U0M-XCB0
T
STG
-65 to +150
°
C
K9F4G08U0M-XIB0
Short Circuit Current
I
OS
5
mA
相關(guān)PDF資料
PDF描述
K9F5608Q0C 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608Q0C-D 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608Q0C-H 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-D 512Mb/256Mb 1.8V NAND Flash Errata
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K8G08UOA 制造商:未知廠家 制造商全稱:未知廠家 功能描述:1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
K9KAG08U0MPCB00 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:sheet of this product is either in preparation or is not effective yet. For more details about product specifications or technical files, please inquire through Contact us
K9KAG08U0M-PCB0000 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:sheet of this product is either in preparation or is not effective yet. For more details about product specifications or technical files, please inquire through Contact us
K9KAG08U0MPCB0T 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:sheet of this product is either in preparation or is not effective yet. For more details about product specifications or technical files, please inquire through Contact us
K9KAG08U0MPCK00 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:sheet of this product is either in preparation or is not effective yet. For more details about product specifications or technical files, please inquire through Contact us
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