參數(shù)資料
型號(hào): K9K8G08U1M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
中文描述: 512M x 8位/ 1克× 8位NAND閃存
文件頁(yè)數(shù): 34/41頁(yè)
文件大小: 1076K
代理商: K9K8G08U1M
FLASH MEMORY
34
Advance
K9F4G08U0M
K9K8G08U1M
Figure 12. Page Copy-Back program Operation with EDC & Read EDC Status
00h
R/B
Add.(5Cycles)
85h
Col. Add.1,2 & Row Add.1,2,3
7Bh
t
PROG
Add.(5Cycles)
t
R
Source Address
Destination Address
35h
10h
I/Ox
Col. Add.1,2 & Row Add.1,2,3
EDC Status Output
Figure 13. Block Erase Operation
BLOCK ERASE
The Erase operation is done on a block basis. Block address loading is accomplished in three cycles initiated by an Erase Setup
command(60h). Only address A
18
to A
29
is valid while A
12
to A
17
is ignored. The Erase Confirm command(D0h) following the block
address loading initiates the internal erasing process. This two-step sequence of setup followed by execution command ensures that
memory contents are not accidentally erased due to external noise conditions.
At the rising edge of WE after the erase confirm command input, the internal write controller handles erase and erase-verify. When
the erase operation is completed, the Write Status Bit(I/O 0) may be checked. Figure 13 details the sequence.
60h
Row Add 1,2,3
R/B
Address Input(3Cycle)
I/O
0
Pass
D0h
70h
Fail
t
BERS
I/Ox
"0"
"1"
EDC OPERATION
Note that the user who use Copy-Back with EDC mode, only one time random data input is possible at the same address during
Copy-Back program or page program mode. For the user who use Copy-Back without EDC, there is no limitation for the random data
input at the same address.
Two-Plane Page Program
Two-Plane Page Program is an extension of Page Program, for a single plane with 2112 byte page registers. Since the device is
equipped with two memory planes, activating the two sets of 2112 byte page registers enables a simultaneous programming of two
pages.
After writing the first set of data up to 2112 byte into the selected page register, Dummy Page Program command (11h) instead of
actual Page Program (10h) is inputted to finish data-loading of the first plane. Since no programming process is involved, R/B
remains in Busy state for a short period of time(tDBSY). Read Status command (70h) may be issued to find out when the device
returns to Ready state by polling the Ready/Busy status bit(I/O 6). Then the next set of data for the other plane is inputted after the
81h command and address sequences. After inputting data for the last plane, actual True Page Program(10h) instead of dummy
Page Program command (11h) must be followed to start the programming process. The operation of R/B and Read Status is the
same as that of Page Program. Althougth two planes are programmed simultaneously, pass/fail is not available for each page when
the program operation completes. Status bit of I/O 0 is set to "1" when any of the pages fails.
Restriction in addressing with Two-Plane Page Program is shown is Figure14.
相關(guān)PDF資料
PDF描述
K9F5608Q0C 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608Q0C-D 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608Q0C-H 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-D 512Mb/256Mb 1.8V NAND Flash Errata
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參數(shù)描述
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K9KAG08U0M-PCB0000 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:sheet of this product is either in preparation or is not effective yet. For more details about product specifications or technical files, please inquire through Contact us
K9KAG08U0MPCB0T 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:sheet of this product is either in preparation or is not effective yet. For more details about product specifications or technical files, please inquire through Contact us
K9KAG08U0MPCK00 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:sheet of this product is either in preparation or is not effective yet. For more details about product specifications or technical files, please inquire through Contact us