參數資料
型號: K9K8G08U1M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
中文描述: 512M x 8位/ 1克× 8位NAND閃存
文件頁數: 20/41頁
文件大?。?/td> 1076K
代理商: K9K8G08U1M
FLASH MEMORY
20
Advance
K9F4G08U0M
K9K8G08U1M
Status Read Cycle & EDC Status Read Cycle
CE
WE
CLE
RE
70h or 7Bh
Status Output
t
CLR
t
CLH
t
WP
t
CH
t
DS
t
DH
t
REA
t
IR
t
RHOH
t
COH
t
WHR
t
CEA
t
CLS
I/Ox
t
CHZ
t
RHZ
t
CS
RE
CE
R/B
I/Ox
t
RR
t
CEA
t
REA
t
RP
t
REH
t
RC
t
RHZ
t
RHOH
t
CHZ
t
COH
Serial Access Cycle after Read
(EDO Type, CLE=L, WE=H, ALE=L)
t
RLOH
Dout
Dout
t
REA
NOTES :
Transition is measured
±
200mV from steady state voltage with load.
This parameter is sampled and not 100% tested.
tRLOH is valid when frequency is higher than 33MHz.
tRHOH starts to be valid when frequency is lower than 33MHz.
相關PDF資料
PDF描述
K9F5608Q0C 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608Q0C-D 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608Q0C-H 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-D 512Mb/256Mb 1.8V NAND Flash Errata
相關代理商/技術參數
參數描述
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K9KAG08U0MPCB00 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:sheet of this product is either in preparation or is not effective yet. For more details about product specifications or technical files, please inquire through Contact us
K9KAG08U0M-PCB0000 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:sheet of this product is either in preparation or is not effective yet. For more details about product specifications or technical files, please inquire through Contact us
K9KAG08U0MPCB0T 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:sheet of this product is either in preparation or is not effective yet. For more details about product specifications or technical files, please inquire through Contact us
K9KAG08U0MPCK00 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:sheet of this product is either in preparation or is not effective yet. For more details about product specifications or technical files, please inquire through Contact us