參數(shù)資料
型號: K9K8G08U1M
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
中文描述: 512M x 8位/ 1克× 8位NAND閃存
文件頁數(shù): 12/41頁
文件大?。?/td> 1076K
代理商: K9K8G08U1M
FLASH MEMORY
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K9F4G08U0M
K9K8G08U1M
AC Characteristics for Operation
NOTE
: 1. If reset command(FFh) is written at Ready state, the device goes into Busy for maximum 5us.
Parameter
Symbol
Min
Max
Unit
Data Transfer from Cell to Register
t
R
-
20
μ
s
ALE to RE Delay
t
AR
10
-
ns
CLE to RE Delay
t
CLR
10
-
ns
Ready to RE Low
t
RR
20
-
ns
RE Pulse Width
t
RP
12
-
ns
WE High to Busy
t
WB
-
100
ns
Read Cycle Time
t
RC
25
-
ns
RE Access Time
t
REA
-
18
ns
CE Access Time
t
CEA
-
23
ns
RE High to Output Hi-Z
t
RHZ
-
100
ns
CE High to Output Hi-Z
t
CHZ
-
30
ns
RE High to Output Hold
t
RHOH
15
-
ns
RE Low to Output Hold
t
RLOH
5
-
ns
CE High to Output Hold
t
COH
15
-
ns
RE High Hold Time
t
REH
10
-
ns
Output Hi-Z to RE Low
t
IR
0
-
ns
RE High to WE Low
t
RHW
100
-
ns
WE High to RE Low
t
WHR
60
-
ns
Device Resetting Time(Read/Program/Copy-Back Program/Erase)
t
RST
-
5/10/40/500
(1)
μ
s
相關(guān)PDF資料
PDF描述
K9F5608Q0C 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608Q0C-D 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608Q0C-H 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C 512Mb/256Mb 1.8V NAND Flash Errata
K9F5608U0C-D 512Mb/256Mb 1.8V NAND Flash Errata
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