參數(shù)資料
型號(hào)： K9K1G08R0B
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128M x 8 Bit NAND Flash Memory
中文描述： 128M的× 8位NAND閃存
文件頁(yè)數(shù)： 39/41頁(yè)
文件大?。?/td> 1072K
代理商： K9K1G08R0B
FLASH MEMORY
39
K9K1G08U0B
K9K1G08R0B
K9K1G08B0B
Advance
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command regis-
ter or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin is
an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. Because pull-up resistor value is related to tr(R/B) and
current drain during busy(ibusy) , an appropriate value can be obtained with the following reference chart(Fig 25). Its value can be
determined by the following guidance.
V
CC
R/B
open drain output
Device
GND
Rp
Figure 22. Rp vs tr ,tf & Rp vs ibusy
ibusy
Busy
Ready Vcc
VOH
tf
tr
VOL
C
L
1.8V device - V
OL
: 0.1V, V
OH
: Vcc
Q
-0.1V
2.7V device - V
OL
: 0.4V, V
OH
: Vcc
Q
-0.4V
3.3V device - V
OL
: 0.4V, V
OH
: 2.4V
相關(guān)PDF資料
PDF描述
K9K1G08U0B 128M x 8 Bit NAND Flash Memory
K9K1G08Q0A 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G08U0A 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G08U0A1 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G16Q0A 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K1G08U0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G08U0A1 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G08U0B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit NAND Flash Memory
K9K1G08U0B-JIB0000 制造商:Samsung Semiconductor 功能描述:1GB SLC DIE STACK X8 FBGA - Trays
K9K1G08U0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:nand flash
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