參數(shù)資料
型號: K9K1G08R0B
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128M x 8 Bit NAND Flash Memory
中文描述: 128M的× 8位NAND閃存
文件頁數(shù): 1/41頁
文件大小: 1072K
代理商: K9K1G08R0B
FLASH MEMORY
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K9K1G08U0B
K9K1G08R0B
K9K1G08B0B
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Document Title
128M x 8 Bit NAND Flash Memory
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near your office.
Revision No.
0.0
0.1
Remark
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Advance
History
Initial issue.
1. Note 1 ( Program/Erase Characteristics) is added( page 13 )
2. NAND Flash Technical Notes is changed.
-Invalid block -> initial invalid block ( page 15 )
-Error in write or read operation ( page 16 )
-Program Flow Chart ( page 16 )
3. Vcc range is changed
-1.7V~1.95V ->1.65V~1.95V
4. 2.7V device is added
5
. Multi plane operation and Copy-Back Program are not supported with 1.8V
device.
Draft Date
Mar. 17th 2003
Oct. 11th 2004
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
http://www.samsung.com/Products/Semiconductor/Flash/TechnicalInfo/datasheets.htm
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