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參數(shù)資料
| 型號(hào)： | K9F4008W0A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512K x 8 bit NAND Flash Memory |
| 中文描述： | 為512k × 8位NAND快閃記憶體 |
| 文件頁(yè)數(shù)： | 7/24頁(yè) |
| 文件大小： | 318K |
| 代理商： | K9F4008W0A |
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K9F4008W0A-TCB0, K9F4008W0A-TIB0
FLASH MEMORY
7
CAPACITANCE
(
T
A
=25
°
C, Vcc=5.0V, f=1.0MHz)
NOTE
: Capacitance is periodically sampled and not 100% tested.
Item
Symbol
Test Condition
Min
Max
Unit
Input / Output Capacitance
C
I/O
V
IL
=0V
-
10
pF
Input Capacitance
C
IN
V
IN
=0V
-
10
pF
VALID BLOCK
NOTE
:
1. The
K9F4008W0A
may include invalid blocks when first shipped. Additional invalid blocks may develop while being used. The number of valid
blocks is presented with both cases of invalid blocks considered. Invalid blocks are defined as blocks that contain one or more bad bits
. Do not erase
or program factory-marked bad blocks.
Refer to the attached technical notes for a appropriate management of invalid blocks.
2. The 1st block, which is placed on 00h block address, is fully guaranteed to be a valid block, does not require Error Correction.
Parameter
Symbol
Min
Typ.
Max
Unit
Valid Block Number
N
VB
125
-
128
Block
Program/Erase Characteristics
Parameter
Symbol
Min
Typ
Max
Unit
Program Time
t
PROG
-
0.5
1
ms
Number of Partial Program Cycles in the Same Frame
Nop
-
-
10
cycles
Block Erase Time
t
BERS
-
6
10
ms
MODE SELECTION
NOTE
: 1. X can be V
IL
or V
IH
2. WP should be biased to CMOS high or CMOS low for standby.
CLE
ALE
CE
WE
RE
WP
Mode
H
L
L
H
X
Read Mode
Command Input
L
H
L
H
X
Address Input(3clock)
H
L
L
H
H
Write Mode
Command Input
L
H
L
H
H
Address Input(3clock)
L
L
L
H
H
Data Input
L
L
L
H
X
Sequential Read & Data Output
L
L
L
H
H
X
During Read(Busy)
X
X
X
X
X
H
During Program(Busy)
X
X
X
X
X
H
During Erase(Busy)
X
X
(1)
X
X
X
L
Write Protect
X
X
H
X
X
0V/V
CC
(2)
Stand-by
AC TEST CONDITION
(K9F4008W0A-TCB0:T
A
=0 to 70
°
C, K9F4008W0A-TIB0:T
A
=-40 to 85
°
C
,
V
CC
=3.0V ~ 5.5V unless otherwise noted)
Parameter
Value
Vcc=3.0V ~ 3.6V
0.4V to 2.6V
Vcc=3.6V ~ 5.5V
0.4V to 2.6V
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load
5ns
0.8V and 2.0V
1 TTL GATE and CL = 100pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F4008W0A- | 512K x 8 bit NAND Flash Memory |
| K9F4008W0A-TCB0 | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| K9F4008W0A-TIB0 | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| K9F4G08U0M | 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory |
| K9K8G08U1M | 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F4008W0A- | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory |
| K9F4008W0A-TCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory |
| K9F4008W0A-TIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory |
| K9F4G08U0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9F4G08U0A-I | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
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