參數資料
型號： K9F4008W0A
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 512K x 8 bit NAND Flash Memory
中文描述： 為512k × 8位NAND快閃記憶體
文件頁數： 6/24頁
文件大?。?/td> 318K
代理商： K9F4008W0A
K9F4008W0A-TCB0, K9F4008W0A-TIB0
FLASH MEMORY
6
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
Parameter
Symbol
Test Conditions
Vcc = 3.0V ~ 3.6V
Vcc = 3.6V ~ 5.5V
Unit
Min
Typ
Max
Min
Typ
Max
Oper-
ating
Current
Burst Read Cycle
I
CC1
tRC=120ns,CE=V
IL
, I
OUT
=0mA
-
5
10
-
10
20
mA
Program
I
CC2
-
-
5
10
-
10
20
Erase
I
CC3
-
-
5
10
-
10
20
Stand-by Current(TTL)
I
SB1
CE=V
IH
, WP=0V/V
CC
-
-
1
-
-
1
Stand-by Current(CMOS)
I
SB2
CE=V
CC
-0.2, WP=0V/V
CC
-
10
50
-
10
50
μ
A
Input Leakage Current
I
LI
V
IN
=0 to 5.5V
-
-
±
10
±
10
-
-
±
10
±
10
Output Leakage Current
I
LO
V
OUT
=0 to 5.5V
-
-
-
-
Input High Voltage, All
inputs
V
IH
-
2.4
-
V
CC
+
0.3
2.4
-
V
CC
+
0.5
V
Input Low Voltage, All inputs
V
IL
-
-0.3
-
0.6
-0.3
-
0.8
Output High Voltage Level
V
OH
I
OH
=-400
μ
A
2.4
-
-
2.4
-
-
Output Low Voltage Level
V
OL
I
OL
=2.1mA
-
-
0.4
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
V
OL
=0.4V
8
10
-
8
10
-
mA
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <20ns.
Maximum DC voltage on input/output pins is V
CC
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on any pin relative to V
SS
V
IN
-0.6 to +7.0
V
Temperature Under Bias
K9F4008W0A-TCB0
T
BIAS
-10 to +125
°
C
K9F4008W0A-TIB0
-40 to +125
Storage Temperature
T
STG
-65 to +150
°
C
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9F4008W0A-TCB0
:
T
A
=0 to 70
°
C, K9F4008W0A-TIB0
:
T
A
=-40 to 85
°
C)
Parameter
Symbol
Min
Typ.
Max
Unit
Supply Voltage
V
CC
3.0
-
5.5
V
Supply Voltage
V
SS
0
0
0
V
相關PDF資料
PDF描述
K9F4008W0A- 512K x 8 bit NAND Flash Memory
K9F4008W0A-TCB0 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
K9F4008W0A-TIB0 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
K9F4G08U0M 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
K9K8G08U1M 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory
相關代理商/技術參數
參數描述
K9F4008W0A- 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory
K9F4008W0A-TCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory
K9F4008W0A-TIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory
K9F4G08U0A 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
K9F4G08U0A-I 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY
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