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參數(shù)資料
| 型號(hào)： | K9F4008W0A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512K x 8 bit NAND Flash Memory |
| 中文描述： | 為512k × 8位NAND快閃記憶體 |
| 文件頁數(shù)： | 19/24頁 |
| 文件大?。?/td> | 318K |
| 代理商： | K9F4008W0A |
K9F4008W0A-TCB0, K9F4008W0A-TIB0
FLASH MEMORY
19
Figure 6. Block Erase Operation
BLOCK ERASE
The Erase operation is done 4K Bytes(1 block) at a time. Block address loading is accomplished in two cycles initiated by an Erase
Setup command(60h). Only address A
12
to A
18
are valid while A
8
to A
11
is ignored. The Erase Confirm command(D0h) following the
block address loading initiates the internal erasing process. This two-step sequence of setup followed by execution command
ensures that memory contents are not accidentally erased due to external noise conditions.
At the rising edge of WE after the erase confirm command input, the internal write controller handles erase, erase-verify and pulse
repetition where required.
60h
Block Add. : A
8
~A
18
I/O
0
~
7
R/B
Address Input(2Cycle)
D0h
READ STATUS
The device contains a Status Register which may be read to find out whether program or erase operation is complete, and whether
the program or erase operation completed successfully. After writing 70h command to the command register, a read cycle outputs the
contents of the Status Register to the I/O pins on the falling edge of CE or RE, whichever occurs last. This two line control allows the
system to poll the progress of each device in multiple memory connections even when R/B pins are common-wired. RE or CE does
not need to be toggled for updated status. Refer to table 2 for specific Status Register definitions. The command register remains in
Status Read mode until further commands are issued to it. Therefore, if the status register is read during a random read cycle, the
required read command(00h) should be input before serial page read cycle.
Table2. Read Status Register Definition
I/O #
Status
Definition
I/O
0
Program
"0" : Successful Program
"1" : Error in Program
I/O
1
Reserved for Future Use
"0"
I/O2
"0"
I/O
3
"0"
I/O
4
"0"
I/O
5
"0"
"0"
I/O
6
Device Operation
"0" : Busy "1" : Ready
I/O
7
Write Protect
"0" : Protected "1" : Not Protected
t
BERS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F4008W0A- | 512K x 8 bit NAND Flash Memory |
| K9F4008W0A-TCB0 | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| K9F4008W0A-TIB0 | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| K9F4G08U0M | 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory |
| K9K8G08U1M | 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F4008W0A- | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory |
| K9F4008W0A-TCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory |
| K9F4008W0A-TIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory |
| K9F4G08U0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9F4G08U0A-I | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
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