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參數(shù)資料
| 型號： | K9F4008W0A |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 512K x 8 bit NAND Flash Memory |
| 中文描述： | 為512k × 8位NAND快閃記憶體 |
| 文件頁數(shù)： | 10/24頁 |
| 文件大小： | 318K |
| 代理商： | K9F4008W0A |
K9F4008W0A-TCB0, K9F4008W0A-TIB0
FLASH MEMORY
10
Error in program or erase operation
K9F4008W0A Technical Notes
(Continued)
Failure Mode
Detection and Countermeasure sequence
Block
Erase Failure
Read after Erase --> Block Replacement
Frame
Program Failure
Status Read after Program --> Block Replacement
Single Bit
Program Failure
("1" --> "0")
Block Verify after Program --> Block Replacement
During Erase operation ;
When the error occurs after an erase operation, prevent future accesses to this bad block
(again by creating a table within the system or other appropriate scheme.)
Over its life time, the additional invalid blocks may develop with NAND Flash memory. Refer to the qualification report for the actual
data.The following possible failure modes should be considered to implement a highly reliable system. In the case of status read fail-
ure after erase or program, block replacement should be done. Because program status fail during a page program does not affect
the data of the other pages in the same block, block replacement can be executed with a page-sized buffer by finding an erased
empty block and reprogramming the current target data and copying the rest of the replaced block. To improve the efficiency of mem-
ory space, it is recommended that the read or verification failure due to single bit error be reclaimed by ECC without any block
replacement. The said additional block failure rate does not include those reclaimed blocks.
Block Replacement
* Step1
When an error happens in the nth page of the Block ’A’ during erase or program operation.
* Step2
Copy the nth page data of the Block ’A’ in the buffer memory to the nth page of another free block. (Block ’B’)
* Step3
Then, copy the data in the 1st ~ (n-1)th page to the same location of the Block ’B’.
* Step4
Do not erase or program to Block ’A’ by creating an ’invalid Block’ table or other appropriate scheme.
Buffer memory of the controller.
1st
Block A
Block B
(n-1)th
nth
(page)
1
2
{
1st
(n-1)th
nth
(page)
{
an error occurs.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9F4008W0A- | 512K x 8 bit NAND Flash Memory |
| K9F4008W0A-TCB0 | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| K9F4008W0A-TIB0 | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVPS00; No. of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| K9F4G08U0M | 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory |
| K9K8G08U1M | 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9F4008W0A- | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory |
| K9F4008W0A-TCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory |
| K9F4008W0A-TIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:512K x 8 bit NAND Flash Memory |
| K9F4G08U0A | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
| K9F4G08U0A-I | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:FLASH MEMORY |
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