- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄224103 > K5A3240YT (SAMSUNG SEMICONDUCTOR CO. LTD.) Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM PDF資料下載
| 型號(hào)： | K5A3240YT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
| 中文描述： | 多芯片封裝存儲(chǔ)器32兆位（4Mx8/2Mx16）雙銀行NOR閃存/分（512Kx8/256Kx16）全CMOS SRAM的 |
| 文件頁(yè)數(shù)： | 23/45頁(yè) |
| 文件大?。?/td> | 867K |
| 代理商： | K5A3240YT |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)當(dāng)前第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)第39頁(yè)第40頁(yè)第41頁(yè)第42頁(yè)第43頁(yè)第44頁(yè)第45頁(yè)
MCP MEMORY
K5A3x40YT(B)C
Revision 0.0
November 2002
- 3 -
Preliminary
ORDERING INFORMATION
K 5 A 3 x 4 0 Y T C - T 7 55
Samsung
MCP Memory
Device Type
Dual Bank Boot Block NOR
+ fCMOS SRAM
NOR Flash Density
(Bank Size), (Organization)
32 : 32Mbit, (8Mb, 24Mb)
(x8/x16 Selectable)
33 : 32Mbit, (16Mb, 16Mb)
(x8/x16 Selectable)
Block Architecture
T = Top Boot Block
B = Bottom Boot Block
Version
C = 4th Generation
SRAM Access Time
55 = 55 ns
Operating Voltage Range
2.7V to 3.3V
Package
T = 69 TBGA
SRAM Density , Organization
4Mbit, x8/x16 Selectable
Bottom Boot Block
Figure 1. FUNCTIONAL BLOCK DIAGRAM
Precharge circuit.
I/O Circuit
Column select
Clk gen.
Row
select
Data
control
Control
logic
SRAM
(256K x16, 512K x8)
Main Cell Array
A0 to A17
A-1,A18 to A20
CEF
OE
UB
CS1S
DQ0 to DQ7
DQ8 to DQ15
VccS
Vss
WE
VccF
Vss
RD/BY
I/O
Interface
&
Bank
Control
X
Dec
Y Dec
Latch &
Control
Latch &
Control
Dec
X
Y Dec
Erase
Control
Program
Control
High
Voltage
Gen.
Bank2
Cell Array
Bank1
Address
Bank2
Address
Bank1 Data-In/Out
Bank2 Data-In/Out
Bank1
Cell Array
CS2S
LB
(Common)
BYTEF
BYTES
SA
RESET
WP/ACC
Flash Access Time
7 = 70 ns
8 = 80 ns
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K6R1004C1C | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-I | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-I10 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-I12 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-I15 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K5A3240YTC-T755 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
| K5A3240YTC-T855 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
| K5A3280YBC-T755 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MCP MEMORY |
| K5A3280YBC-T855 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:MCP MEMORY |
| K5A3280YTC-T755 | 制造商:Samsung Electro-Mechanics 功能描述:MCP 32M BIT (4M X 8/2M X 16) DUAL BANK NOR FLASH MEMORY / 8M(1M X 8/512K X 16) FULL CMOS SRAM, PBGA69 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。