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參數(shù)資料
| 型號(hào)： | K5A3240YT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
| 中文描述： | 多芯片封裝存儲(chǔ)器32兆位（4Mx8/2Mx16）雙銀行NOR閃存/分（512Kx8/256Kx16）全CMOS SRAM的 |
| 文件頁數(shù)： | 12/45頁 |
| 文件大?。?/td> | 867K |
| 代理商： | K5A3240YT |
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MCP MEMORY
K5A3x40YT(B)C
Revision 0.0
November 2002
- 2 -
Preliminary
Multi-Chip Package MEMORY
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
The K5A3x40YT(B)C featuring single 3.0V power supply is a
Multi Chip Package Memory which combines 32Mbit Dual Bank
Flash and 4Mbit fCMOS SRAM.
The 32Mbit Flash memory is organized as 4M x8 or 2M x16 bit
and 4Mbit SRAM is organized as 512K x8 or 256K x16 bit. The
memory architecture of flash memory is designed to divide its
memory arrays into 71 blocks and this provides highly flexible
erase and program capability. This device is capable of reading
data from one bank while programming or erasing in the other
bank with dual bank organization.
The Flash memory performs a program operation in units of 8 bits
(Byte) or 16 bits (Word) and erases in units of a block. Single or
multiple blocks can be erased. The block erase operation is com-
pleted for typically 0.7sec.
The 4Mbit SRAM supports low data retention voltage for battery
backup operation with low data retention current.
The K5A3x40YT(B)C is suitable for the memory of mobile com-
munication system to reduce mount area. This device is available
in 69-ball TBGA Type package.
FEATURES
Power Supply voltage : 2.7V to 3.3V
Organization
- Flash : 4,194,304 x 8 / 2,097,152 x 16 bit
- SRAM : 524,288 x 8 / 262,144 x 16 bit
Access Time (@2.7V)
- Flash : 70 ns, SRAM : 55 ns
Power Consumption (typical value)
- Flash Read Current : 14 mA (@5MHz)
Program/Erase Current : 15 mA
Standby mode/Autosleep mode : 5
A
Read while Program or Read while Erase : 25 mA
- SRAM Operating Current : 20 mA
Standby Current : 0.5
A
Secode(Security Code) Block : Extra 64KB Block (Flash)
Block Group Protection / Unprotection (Flash)
Flash Bank Size : 8Mb / 24Mb , 16Mb / 16Mb
Flash Endurance : 100,000 Program/Erase Cycles Minimum
SRAM Data Retention : 1.5 V (min.)
Industrial Temperature : -40°C ~ 85°C
Package : 69-ball TBGA Type - 8 x 11mm, 0.8 mm pitch
1.2mm(max.) Thickness
GENERAL DESCRIPTION
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
BALL CONFIGURATION
BALL DESCRIPTION
Ball Name
Description
A0 to A17
Address Input Balls (Common)
A-1, A18 to A20
Address Input Balls (Flash Memory)
DQ0 to DQ15
Data Input/Output Balls (Common)
RESET
Hardware Reset (Flash Memory)
WP/ACC
Write Protection / Acceleration Program
(Flash Memory)
VccS
Power Supply (SRAM)
VccF
Power Supply (Flash Memory)
Vss
Ground (Common)
UB
Upper Byte Enable (SRAM)
LB
Lower Byte Enable (SRAM)
BYTES
BYTES Control (SRAM)
BYTEF
BYTEF Control (Flash Memory)
SA
Address Inputs (SRAM)
CEF
Chip Enable (Flash Memory)
CS1S
Chip Enable (SRAM Low Active)
CS2S
Chip Enable (SRAM High Active)
WE
Write Enable (Common)
OE
Output Enable (Common)
RY/BY
Ready/Busy (Flash memory)
N.C
No Connection
Top View (Ball Down)
A7
UB
A8
A3
A6
RESET
LB
CS2S
A19
A2
A5
A18
RY/BY
A20
A9
A4
DQ6
CEF
OE
DQ9
DQ3
DQ4
DQ13
1
2
3
4
5
6
A
B
C
D
E
F
WP/
WE
Vss
A10
DQ1
A0
A1
A17
A11
A12
A15
A13
N.C
A14
SA
A16
DQ15
BYTEF
7
8
N.C
DQ8
DQ2
DQ11
DQ5
H
DQ14
CS1S
DQ0
DQ10
VccF
VccS
DQ12
G
DQ7
Vss
BYTES
/A-1
N.C
9
10
K
J
69 Ball TBGA , 0.8mm Pitch
ACC
相關(guān)PDF資料 |
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| K6R1004C1C | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-I | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-I10 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-I12 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-I15 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
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| K5A3240YTC-T755 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
| K5A3240YTC-T855 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
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