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參數(shù)資料
| 型號： | K5A3240YT |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
| 中文描述： | 多芯片封裝存儲器32兆位（4Mx8/2Mx16）雙銀行NOR閃存/分（512Kx8/256Kx16）全CMOS SRAM的 |
| 文件頁數(shù)： | 15/45頁 |
| 文件大?。?/td> | 867K |
| 代理商： | K5A3240YT |
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MCP MEMORY
K5A3x40YT(B)C
Revision 0.0
November 2002
- 22 -
Preliminary
Table 12. Common Flash Memory Interface Code
NOTE:
1. The number of blocks in Bank2 is device dependent.
K5A3240Y(8Mb/24Mb) = 30h (48blocks)
K5A3340Y(16Mb/16Mb) = 20h (32blocks)
Description
Addresses
(Word Mode)
Addresses
(Byte Mode)
Data
Query-unique ASCII string "PRI"
40H
41H
42H
80H
82H
84H
0050H
0052H
0049H
Major version number, ASCII
43H
86H
0033H
Minor version number, ASCII
44H
88H
0033H
Address Sensitive Unlock(Bits 1-0)
0 = Required, 1= Not Required
Silcon Revision Number(Bits 7-2)
45H
8AH
0000H
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
46H
8CH
0002H
Block Protect
0 = Not Supported, 1 = Number of blocks in per group
47H
8EH
0001H
Block Temporary Unprotect 00 = Not Supported, 01 = Supported
48H
90H
0001H
Block Protect/Unprotect scheme 04=K8D1x16U mode
49H
92H
0004H
Simultaneous Operation (1)
00 = Not Supported, XX = Number of Blocks in Bank2
4AH
94H
00XXH
Burst Mode Type 00 = Not Supported, 01 = Supported
4BH
96H
0000H
Page Mode Type
00 = Not Supported, 01 = 4 Word Page 02 = 8 Word Page
4CH
98H
0000H
ACC(Acceleration) Supply Minimum
00 = Not Supported, D7 - D4 : Volt, D3 - D0 : 100mV
4DH
9AH
0085H
ACC(Acceleration) Supply Maximum
00 = Not Supported, D7 - D4 : Volt, D3 - D0 : 100mV
4EH
9CH
00C5H
Top/Bottom Boot Block Flag
02H = Bottom Boot Device, 03H = Top Boot Device
4FH
9EH
000XH
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