參數(shù)資料
型號: K4N26323AE
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128Mbit GDDR2 SDRAM
中文描述: 128Mbit GDDR2 SDRAM的
文件頁數(shù): 9/52頁
文件大?。?/td> 826K
代理商: K4N26323AE
- 9 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Self
Refresh
Auto
Refresh
Idle
MRS
EMRS
Row
Active
Precharge
PREALL
Down
A
Power
On
ACT
Read A
Read
REFS
REFSX
REFA
CKEL
MRS
CKEH
CKEH
CKEL
Write
Power
Applied
Automatic Sequence
Command Sequence
Read A
Write A
Read
PRE
PRE
PRE
PRE
Down
RA
RA
Write A
Power
PPower
Precharge
PREALL
Read
Write
PREALL = Precharge All Banks
MRS = Mode Register Set
EMRS = Extended Mode Register Set
REFS = Enter Self Refresh
REFSX = Exit Self Refresh
REFA = Auto Refresh
CKEL = Enter Power Down
CKEH = Exit Power Down
ACT = Active
Write A = Write with Autoprecharge
Read A = Read with Autoprecharge
PRE = Precharge
FUNTIONAL DESCRIPTION
Simplified State Diagram
DLL
Enable
Write
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