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參數(shù)資料
| 型號： | K4N26323AE |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128Mbit GDDR2 SDRAM |
| 中文描述： | 128Mbit GDDR2 SDRAM的 |
| 文件頁數(shù)： | 24/52頁 |
| 文件大?。?/td> | 826K |
| 代理商： | K4N26323AE |
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- 24 -
Rev. 1.7 (Jan. 2003)
128M GDDR2 SDRAM
K4N26323AE-GC
Burst Write with Auto-Precharge : AL = 0, WL = 1, t
WR
= 5, t
RP
=8(for the same bank)
0
2
3
1
CMD
NOP
NOP
NOP
NOP
NOP
Bank A
Active
DQs
NOP
CK, CK
4
7
8
9
16
WRITE A
Post CAS
A8 = 1
NOP
> = t
WR
> = t
RP
DINA
0
DINA
1
DINA
2
DINA
3
DQS
Auto Precharge Begins
WL=1
Burst Write with Auto-Precharge
If A8 is high when a Write Command is issued, the Write with Auto-Precharge function is engaged. The GDDR2 SDRAM
automatically begins precharge operation after the completion of the burst write plus write recovery time (tWR).
Interruption of the Write with Auto-Precharge function is prohibited. Active command of same bank can be issued
WL+tWR+tRP+BL/2 cycles later from the Write with Auto-Precharge command. The bank undergoing Auto-Precharge
from the completion of the write burst may be reactivated if the following two conditions are satisfied.
(1) The data-in to bank activate delay time (tWR + tRP) has been satisfied.
(2) The RAS cycle time (tRC) from the previous bank activation has been satisfied.
Burst Write with Auto-Precharge (AL=0)
*When AL(Additive Latency) is 1, a active command for same bank can be issued from 17th cycle , a READ or READ with Auto Pre-
charge command for different bank can be issued from 8th cycle and others are same with AL=0.
* All Bank Precharge command can be issued from 8th cycle.
Asserted
command
For same bank
For different bank
1 ~ 7
8
9 ~ 15
16
1
2 ~ 6
7
WRITE
Illegal
Illegal
Illegal
Illegal
Illegal
Legal
Legal
WRITE with Auto Precharge
Illegal
Illegal
Illegal
Illegal
Illegal
Legal
Legal
READ
Illegal
Illegal
Illegal
Illegal
Illegal
Illegal
Legal
READ with Auto Precharge
Illegal
Illegal
Illegal
Illegal
Illegal
Illegal
Legal
Active
Illegal
Illegal
Illegal
Legal
Legal
Legal
Legal
Precharge
Illegal
Illegal
Illegal
Illegal
Legal
Legal
Legal
All Bank Precharge
Illegal
Legal
Legal
Legal
-
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| K4N56163QF | 256Mbit gDDR2 SDRAM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4N26323AE-GC20 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit GDDR2 SDRAM |
| K4N26323AE-GC22 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit GDDR2 SDRAM |
| K4N26323AE-GC25 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128Mbit GDDR2 SDRAM |
| K4N27 | 制造商:KODENSHI 制造商全稱:KODENSHI KOREA CORP. 功能描述:Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
| K4N28 | 制造商:KODENSHI 制造商全稱:KODENSHI KOREA CORP. 功能描述:Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) |
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