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參數(shù)資料
| 型號(hào)： | K4M64163PK-BE900 |
| 元件分類(lèi)： | DRAM |
| 英文描述： | 4M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 |
| 封裝： | LEAD FREE, FBGA-54 |
| 文件頁(yè)數(shù)： | 9/12頁(yè) |
| 文件大?。?/td> | 114K |
| 代理商： | K4M64163PK-BE900 |
K4M64163PK - R(B)E/G/C/F
October 2005
6
Mobile-SDRAM
1.8V
13.9K
10.6K
Output
20pF
VOH (DC) = VDDQ - 0.2V, IOH = -0.1mA
VOL (DC) = 0.2V, IOL = 0.1mA
Vtt=0.5 x VDDQ
50
Output
20pF
Z0=50
Figure 2. AC Output Load Circuit
Figure 1. DC Output Load Circuit
AC OPERATING TEST CONDITIONS(VDD = 1.7V~1.95V, TA = -25 ~ 85°C for Extended, -25 ~ 70°C for Commercial)
Parameter
Value
Unit
AC input levels (Vih/Vil)
0.9 x VDDQ / 0.2
V
Input timing measurement reference level
0.5 x VDDQ
V
Input rise and fall time
tr/tf = 1/1
ns
Output timing measurement reference level
0.5 x VDDQ
V
Output load condition
See Figure 2
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| K4M64163PK-BF1L | 制造商:SAMSUNG 制造商全稱(chēng):Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
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