- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄296260 > K4M64163PK-BE900 4M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 PDF資料下載
參數(shù)資料
| 型號： | K4M64163PK-BE900 |
| 元件分類： | DRAM |
| 英文描述： | 4M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 |
| 封裝： | LEAD FREE, FBGA-54 |
| 文件頁數(shù)： | 11/12頁 |
| 文件大小： | 114K |
| 代理商： | K4M64163PK-BE900 |
K4M64163PK - R(B)E/G/C/F
October 2005
8
Mobile-SDRAM
AC CHARACTERISTICS(AC operating conditions unless otherwise noted)
NOTES :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Parameter
Symbol
-75
-90
-1L
Unit
Note
Min
Max
Min
Max
Min
Max
CLK cycle time
CAS latency=3
tCC
7.5
1000
9
1000
9
1000
ns
1
CAS latency=2
tCC
12
15
CAS latency=1
tCC
-
25
CLK to valid output delay
CAS latency=3
tSAC
6
7
ns
1,2
CAS latency=2
tSAC
9
10
CAS latency=1
tSAC
-
20
Output data hold time
CAS latency=3
tOH
2.5
ns
2
CAS latency=2
tOH
2.5
CAS latency=1
tOH
-
2.5
CLK high pulse width
tCH
2.5
3.0
ns
3
CLK low pulse width
tCL
2.5
3.0
ns
3
Input setup time
tSS
2.0
ns
3
Input hold time
tSH
1
ns
3
CLK to output in Low-Z
tSLZ
1
ns
2
CLK to output in Hi-Z
CAS latency=3
tSHZ
6
7
ns
CAS latency=2
9
10
CAS latency=1
-
20
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K507 | 2 ELEMENT, 2000 uH, GENERAL PURPOSE INDUCTOR |
| K001 | 2 ELEMENT, 2000 uH, GENERAL PURPOSE INDUCTOR |
| K004 | 2 ELEMENT, 500 uH, GENERAL PURPOSE INDUCTOR |
| K5A22NAU | KEYPAD SWITCH, SPST, MOMENTARY, 0.1A, 50VDC, 2 N, SURFACE MOUNT-STRAIGHT |
| K5A26NAU | KEYPAD SWITCH, SPST, MOMENTARY, 0.1A, 50VDC, 6 N, SURFACE MOUNT-STRAIGHT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4M64163PK-BF1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M64163PK-BF75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M64163PK-BF90 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M64163PK-BG1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4M64163PK-BG75 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。