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參數(shù)資料
| 型號(hào)： | IXGE200N60B |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | HiPerFAST IGBT |
| 中文描述： | 160 A, 600 V, N-CHANNEL IGBT |
| 封裝： | ISOPLUS227, 4 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 75K |
| 代理商： | IXGE200N60B |
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
SOT-227B miniBLOC
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ. max.
g
fs
I
C
Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
= 60 A; V
CE
= 10 V,
50
75
S
C
ies
C
oes
C
res
11000
680
190
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
Q
g
Q
ge
Q
gc
350
72
131
nC
nC
nC
I
C
= 120A, V
GE
= 15 V, V
CE
= 0.5 V
CES
t
d(on)
t
ri
E
on
t
d(off)
60
45
2.4
200
160
5.5
ns
ns
mJ
ns
ns
mJ
360
280
9.6
t
ri
E
off
t
d(on)
t
ri
E
on
t
d(off)
t
ri
E
off
60
60
4.8
290
250
8.7
ns
ns
mJ
ns
ns
mJ
R
thJC
R
thCK
0.25 K/W
0.07
K/W
Inductive load, T
J
= 25
°
C
I
C
= 100A, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 2.4
Remarks: Switching times
may increase for
V
(Clamp) > 0.8 V
,
higher T
J
or increased R
G
Inductive load, T
J
= 125
°
C
I
C
=100A, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 2.4
Remarks: Switching times
may increase for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
IXGE 200N60B
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGE200N60B_04 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT |
| IXGE50N100Z | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 50A I(C) |
| IXGE50N50Z | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) |
| IXGE50N60Z | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 50A I(C) |
| IXGE50N80Z | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 800V V(BR)CES | 50A I(C) |
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