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參數(shù)資料
| 型號： | IXGA12N60CD1 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Lightspeed Series HiPerFAST IGBT(Lightspeed系列,VCES為600V，VCE(sat)為2.1V的HiPerFAST絕緣柵雙極晶體管) |
| 中文描述： | 24 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 52K |
| 代理商： | IXGA12N60CD1 |
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GE
= 1 M
Continuous
Transient
600
600
V
V
20
30
V
V
T
C
= 25 C
T
C
= 90 C
T
C
= 25 C, 1 ms
V
= 15 V, T
= 125 C, R
= 33
Clamped inductive load, L = 300 H
24
12
48
A
A
A
I
= 24
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
M
d
T
C
= 25 C
100
W
-55 ... +150
C
C
C
150
-55 ... +150
Mounting torque with screw M3
Mounting torque with screw M3.5
0.45/4
0.55/5
Nm/lb.in.
Nm/lb.in.
Weight
4
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
C
Features
Very high frequency IGBT
New generation HDMOS
TM
process
G
International standard package
JEDEC TO-220AB and TO-263AA
High peak current handling capability
Applications
PFC circuit
AC motor speed control
DC servo and robot drives
Switch-mode and resonant-mode
power supplies
High power audio amplifiers
Advantages
Fast switching speed
High power density
98513B (7/00)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
I
C
= 250 A, V
GE
= 0 V
= 250 A, V
GE
= V
GE
600
2.5
V
V
5.0
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
200
1.5
A
mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
100
nA
V
CE(sat)
I
C
= I
CE90
, V
GE
= 15 V
2.1
2.7
V
HiPerFAST
TM
IGBT
Lightspeed
TM
Series
V
CES
I
C25
V
CE(sat)
=
t
fi(typ)
= 600 V
=
24 A
2.1 V
= 55 ns
IXGA 12N60CD1
IXGP 12N60CD1
TO-220 AB
(IXGP)
G = Gate
E = Emitter
C
TAB = Collector
= Collector
E
C
G
G
E
TO-263 (IXGA)
C (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXGA12N60C | HiPerFAST IGBT |
| IXGA15N100C | Lightspeed Series IGBT(VCES為1000V，VCE(sat)為3.5V的絕緣柵雙極晶體管) |
| IXGA15N120B | HiPerFAST IGBT(VCES為1200V，VCE(sat)為3.2V的HiPerFAST絕緣柵雙極晶體管) |
| IXGA15N120C | Lightspeed Series IGBT(VCES為1200V，VCE(sat)為3.8V的絕緣柵雙極晶體管) |
| IXGA20N100 | IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGA14N120B | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:IGBT Optimized for switching up to 35 KHz |
| IXGA150N30TC | 功能描述:IGBT 晶體管 150 Amps 300V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGA15N100C | 功能描述:IGBT 晶體管 30 Amps 1000V 3.5 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGA15N120B | 功能描述:IGBT 晶體管 30 Amps 1200V 3.2 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGA15N120C | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBT |
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