參數(shù)資料
型號(hào): IXGA12N60C
廠商: IXYS CORP
元件分類: 功率晶體管
英文描述: HiPerFAST IGBT
中文描述: 20 A, 600 V, N-CHANNEL IGBT, TO-263AB
封裝: D2PAK-3
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 96K
代理商: IXGA12N60C
2002 IXYS All rights reserved
Symbol
(T
J
= 25
°
C, unless otherwise specified)
Test Conditions
Characteristic Values
Typ.
Min.
Max.
BV
CES
V
GE(th)
I
C
I
C
= 250
μ
A, V
GE
= 0 V
= 250
μ
A, V
GE
= V
GE
600
2.5
V
V
5.0
I
CES
V
CE
= 0.8, V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
200
μ
A
mA
1
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
CE90
, V
GE
= 15
2.1
2.7
V
TO-220 AB
(IXGP)
C (tab)
TO-263 AA (IXGA)
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
T
J
= 25
°
C to 150
°
C
= 25
°
C to 150
°
C; R
GE
= 1 M
600
600
V
V
V
GES
V
GEM
Continuous
Transient
±
20
±
30
V
V
I
C25
I
C90
I
CM
T
C
T
C
T
C
= 25
°
C
= 90
°
C
= 25
°
C, 1 ms
24
12
48
A
A
A
SSOA
(RBSOA)
V
GE
= 15 V, T
VJ
= 125
°
C, R
G
= 33
Clamped inductive load, L = 300
μ
H
I
CM
= 24
@ 0.8 V
CES
A
P
C
T
C
= 25
°
C
100
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
M
d
Mounting torque with screw M3
Mounting torque with screw M3.5
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
4
g
300
°
C
G = Gate
E = Emitter
C
TAB = Collector
= Collector
G
E
97534B (2/02)
HiPerFAST
TM
IGBT
Features
Very high freqency IGBT
New generation HDMOS
TM
process
International standard package
JEDEC TO-220AB and TO-263AA
High peak current handling capability
Applications
PFC circuits
AC motor speed control
DC servo & robot drives
Switch-mode and resonant-mode
power supplies
High power audio amplifiers
Advantages
Fast switching speed
High power density
E
C
G
V
CES
= 600 V
I
C25
=
V
CE(sat)
=
t
fi(typ)
=
2
4
A
2.7 V
55 ns
IXGA 12N60C
IXGP 12N60C
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