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參數(shù)資料
| 型號： | IXGA12N60B |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | HiPerFAST IGBT |
| 中文描述： | 24 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 81K |
| 代理商： | IXGA12N60B |
2002 IXYS All rights reserved
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GE
= 1 M
600
V
600
V
Continuous
±
20
±
30
V
Transient
V
T
C
= 25
°
C
T
C
= 90
°
C
T
C
= 25
°
C, 1 ms
24
A
12
A
48
A
V
GE
= 15 V, T
VJ
= 125
°
C, R
G
= 33
Clamped inductive load, L = 300
μ
H
I
CM
= 24
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
M
d
T
C
= 25
°
C
100
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque with screw M3
Mounting torque with screw M3.5
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Weight
4
g
IXGA 12N60B
IXGP 12N60B
V
CES
I
C25
V
CE(sat)
= 2.1 V
t
fi(typ)
= 120 ns
= 600 V
= 24 A
Features
Moderate frequency IGBT and anti-
parallel FRED in one package
New generation HDMOS
TM
process
International standard package
JEDEC TO-220AB and TO-263AA
High peak current handling capability
Applications
PFC circuit
AC motor speed control
DC servo and robot drives
Switch-mode and resonant-mode
power supplies
98909 (2/02)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
BV
CES
V
GE(th)
I
C
= 250
μ
A, V
GE
= 0 V
= 250
μ
A, V
GE
= V
GE
600
V
I
C
2.5
5.0
V
I
CES
V
CE
= 0.8 V
CES
V
GE
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
100
μ
A
mA
1
I
GES
V
CE
= 0 V, V
GE
=
±
20 V
±
100
nA
V
CE(sat)
I
C
= I
CE90
, V
GE
= 15 V
2.1
V
G
E
C (TAB)
TO-263 AA (IXGA)
G
E
TO-220 AB (IXGP)
C (TAB)
HiPerFAST
TM
IGBT
Preliminary data sheet
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXGP12N60B | HiPerFAST IGBT |
| IXGA12N60CD1 | Lightspeed Series HiPerFAST IGBT(Lightspeed系列,VCES為600V，VCE(sat)為2.1V的HiPerFAST絕緣柵雙極晶體管) |
| IXGA12N60C | HiPerFAST IGBT |
| IXGA15N100C | Lightspeed Series IGBT(VCES為1000V，VCE(sat)為3.5V的絕緣柵雙極晶體管) |
| IXGA15N120B | HiPerFAST IGBT(VCES為1200V，VCE(sat)為3.2V的HiPerFAST絕緣柵雙極晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGA12N60BD1 | 功能描述:IGBT 晶體管 G-series A,B,C RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGA12N60C | 功能描述:IGBT 晶體管 24 Amps 600V 2.7 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGA12N60CD1 | 功能描述:IGBT 晶體管 24 Amps 600V 2.7 Rds RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGA14N120B | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:IGBT Optimized for switching up to 35 KHz |
| IXGA150N30TC | 功能描述:IGBT 晶體管 150 Amps 300V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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