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參數(shù)資料
| 型號： | IXFV26N60P |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated |
| 中文描述： | 26 A, 600 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLUS220, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 253K |
| 代理商： | IXFV26N60P |
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 26N60P IXFQ 26N60P
IXFV 26N60P IXFV 26N60PS IXFT 26N60P
Fig. 2. Extended Output Characteristics
@ 25
o
C
0
6
12
18
24
30
36
42
48
54
60
0
3
6
9
12
15
18
21
24
27
30
V
D S
- Volts
I
D
V
GS
= 10V
7V
5V
6V
Fig. 1. Output Characteristics
@ 25
o
C
0
4
8
12
16
20
24
0
1
2
3
4
5
6
7
V
D S
- Volts
I
D
V
GS =
10V
7V
5V
6V
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 20 V; I
D
= 0.5 I
D25
, pulse test
16
26
S
C
iss
C
oss
C
rss
4150
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
400
pF
27
pF
t
d(on)
t
r
t
d(off)
t
f
25
ns
V
GS
= 10 V, V
DS
= 0.5 I
D25
R
G
= 5
(External)
27
ns
75
ns
21
ns
Q
g(on)
Q
gs
Q
gd
72
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
27
nC
24
nC
R
thJC
R
thCK
0.27 K/W
TO-3P, PLUS220 & TO-247 0.21 K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min.
Symbol
Test Conditions
Typ.
Max.
I
S
V
GS
= 0 V
26
A
I
SM
Repetitive
78
A
V
SD
I
F
= I
S
, V
GS
= 0 V, pulse test
1.5
V
t
rr
I
RM
Q
RM
I
F
= 25A, -di/dt = 100 A/
μ
s
150
250
ns
V
R
= 100V; V
GS
= 0 V
7
A
0.7
μ
C
Characteristic Curves
IXYS MOSFETs and IGBTs are covered by
one or moreof the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXFV26N60PS | 功能描述:MOSFET 600V 26A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFV30N50P | 功能描述:MOSFET 500V 30A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFV30N50PS | 功能描述:MOSFET 500V 30A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFV30N60P | 功能描述:MOSFET 600V 30A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFV30N60PS | 功能描述:MOSFET 600V 30A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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