參數(shù)資料
型號(hào)： IXFR12N100Q
廠商： IXYS CORP
元件分類： JFETs
英文描述： N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances
中文描述： 10 A, 1000 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOPLUS247, 3 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 33K
代理商： IXFR12N100Q
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
1000
1000
V
V
V
GS
V
GSM
Continuous
Transient
20
30
V
V
I
D25
T
C
= 25 C
12N100
10N100
12N100
10N100
12N100
10N100
10
9
48
40
12
10
A
A
A
A
A
A
I
DM
T
C
= 25 C, Pulse width limited by T
JM
I
AR
T
C
= 25 C
E
AR
T
C
= 25 C
30
mJ
dv/dt
I
S
T
J
I
, di/dt 100 A/ s, V
DD
V
DSS
150 C, R
G
= 2
5
V/ns
P
D
T
C
= 25 C
250
W
T
J
T
JM
T
stg
-55 ... +150
C
C
C
150
-55 ... +150
T
L
1.6 mm (0.063 in.) from case for 10 s
300
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
Weight
5
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
1000
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3mA
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4mA
2.5
5.5
V
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25 C
T
J
= 125 C
50
1
A
mA
R
DS(on)
V
= 10 V, I
D
= I
T
Notes 1 & 2
12N100
10N100
1.05
1.2
98589 (1/99)
ISOPLUS 247
TM
G
D
Advanced Technical Information
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<50pF)
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
Easy assembly
Space savings
High power density
G = Gate
S = Source
D = Drain
* Patent pending
Isolated back surface*
V
DSS
I
D25
10 A
9 A
R
DS(on)
1.05
1.20
IXFR 12N100Q 1000 V
IXFR 10N100Q 1000 V
t
rr
200 ns
HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
Q CLASS
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated, High dV/dt
Low Gate Charge and Capacitances
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料
PDF描述
IXFR120N20 HiPerFETTM Power MOSFETs ISOPLUS247
IXFR150N15 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓150V,導(dǎo)通電阻12.5mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET)
IXFR15N80Q N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓800V,導(dǎo)通電阻0.60Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET)
IXFR180N07 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓70V,導(dǎo)通電阻6mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET)
IXFR180N085 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓85V,導(dǎo)通電阻7mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFR12N120P 功能描述:MOSFET 12 Amps 1200V 1 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR13N50 功能描述:MOSFET 13 Amps 500V 0.4 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR140N20P 功能描述:MOSFET 75 Amps 200V 0.018 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR140N30P 功能描述:MOSFET 82 Amps 300V 0.026 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR14N100Q2 功能描述:MOSFET 14 Amps 1000V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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