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參數(shù)資料
| 型號： | IXFR15N80Q |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓800V,導通電阻0.60Ω的N溝道增強型HiPerFET功率MOSFET) |
| 中文描述： | 13 A, 800 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ISOPLUS247, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 33K |
| 代理商： | IXFR15N80Q |
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
800
800
V
V
V
GS
V
GSM
Continuous
Transient
20
30
V
V
I
D25
I
DM
I
AR
T
C
= 25 C
T
C
= 25 C, Note 1
T
C
= 25 C
13
60
15
A
A
A
E
AR
E
AS
dv/dt
T
C
= 25 C
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
T
J
150 C, R
G
= 2
T
C
= 25 C
30
1.0
mJ
J
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
Weight
250
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
C
50/60 Hz, RMS
t = 1 min
2500
V~
5
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
800
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3 mA
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4mA
2.0
4.5
V
I
GSS
V
GS
= 20 V, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25 C
T
J
= 125 C
25
1
A
mA
R
DS(on)
V
= 10 V, I
D
= 7.5A
Note 2
0.60
98590A (7/00)
ISOPLUS 247
TM
G
D
HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
Q Class
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated, High dV/dt
Low Gate Charge and Capacitances
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<50pF)
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
Easy assembly
Space savings
High power density
G = Gate
S = Source
D = Drain
* Patent pending
Isolated back surface*
IXFR 15N80Q V
DSS
= 800 V
= 13 A
I
D25
R
DS(on)
= 0.60
t
rr
250 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
相關PDF資料 |
PDF描述 |
|---|---|
| IXFR180N07 | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓70V,導通電阻6mΩ的N溝道增強型HiPerFET功率MOSFET) |
| IXFR180N085 | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓85V,導通電阻7mΩ的N溝道增強型HiPerFET功率MOSFET) |
| IXFR180N10 | HiPerFET Power MOSFETs ISOPLUS247 |
| IXFR180N06 | HiPerFETTM Power MOSFETs |
| IXFR200N10P | PolarTM HiPerFET Power MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IXFR16N120P | 功能描述:MOSFET 16 Amps 1200V 1 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFR16N80P | 功能描述:MOSFET Polar HiperFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFR180N06 | 功能描述:MOSFET 180 Amps 60V 0.005 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFR180N07 | 功能描述:MOSFET 180 Amps 70V 0.006 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFR180N085 | 功能描述:MOSFET 180 Amps 85V 0.007 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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