參數(shù)資料
型號： IXFR100N25
廠商： IXYS CORP
元件分類： JFETs
英文描述： N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓250V,導(dǎo)通電阻27mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET)
中文描述： 87 A, 250 V, 0.027 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOPLUS247, 3 PIN
文件頁數(shù)： 1/2頁
文件大小： 81K
代理商： IXFR100N25
2001 IXYS All rights reserved
Isolated backside*
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
250
250
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
I
L(RMS)
I
DM
I
AR
T
C
= 25
°
C (MOSFET chip capability)
T
C
= External lead current limit
T
C
= 25
°
C, Note 1
T
C
= 25
°
C
87
75
A
A
A
A
400
100
E
AR
E
AS
T
C
= 25
°
C
T
C
= 25
°
C
64
3
mJ
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 2
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
5
V/ns
P
D
T
C
= 25
°
C
400
W
T
J
T
JM
T
stg
T
L
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 s
300
°
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
Weight
5
g
ISOPLUS 247
TM
E153432
HiPerFET
TM
Power MOSFETs
ISOPLUS247
TM
(Electrically Isolated Backside)
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
Features
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load
Switching (UIS)
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Advantages
Easy assembly
Space savings
High power density
G = Gate
S = Source
D = Drain
* Patent pending
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3mA
250
V
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA
2.0
4 V
I
GSS
V
GS
=
±
20 V, V
DS
= 0
±
200 nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
100
μ
A
2 mA
R
DS(on)
V
GS
= 10 V, I
D
= I
T
Notes 2, 3
27 m
98840 (5/01)
IXFR 100N25
V
DSS
I
D25
R
DS(on)
= 250
= 87
=
V
A
27 m
t
rr
≤
250 ns
Advance Technical Information
相關(guān)PDF資料
PDF描述
IXFR10N100Q N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances
IXFR12N100Q N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances
IXFR120N20 HiPerFETTM Power MOSFETs ISOPLUS247
IXFR150N15 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓150V,導(dǎo)通電阻12.5mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET)
IXFR15N80Q N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓800V,導(dǎo)通電阻0.60Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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IXFR10N100F 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs ISOPLUS247
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IXFR120N20 功能描述:MOSFET 200V 105A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR12N100 功能描述:MOSFET N-CH 1000V 10A ISOPLUS247 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HiPerFET™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
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