參數(shù)資料
型號： IXFT26N60P
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
中文描述： 26 A, 600 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
封裝： TO-268, 3 PIN
文件頁數(shù)： 1/5頁
文件大?。?/td> 253K
代理商： IXFT26N60P
2005 IXYS All rights reserved
GDS
G = Gate
S = Source
D = Drain
TAB = Drain
DS99435(08/05)
PolarHV
TM
Power MOSFET
V
DSS
I
D25
R
DS(on)
≤
270 m
t
rr
≤
200
= 600
= 26
V
A
ns
Advance Technical Information
N-Channel Enhancement Mode
Fast Recovery Diode
Avalanche Rated
TO-3P (IXFQ)
G
D
S
D (TAB)
Symbol
(T
J
= 25
°
C, unless otherwise specified)
V
GS
= 0 V, I
D
= 250
μ
A
Test Conditions
Characteristic Values
Min. Typ.
Max.
V
DSS
600
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.5
5.0
V
I
GSS
V
GS
=
±
30 V, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
25
μ
A
μ
A
T
J
= 125
°
C
250
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
270
m
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
600
V
600
V
V
GSS
V
GSM
Continuous
±
30
±
40
V
Transient
V
I
D25
I
DM
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
26
A
65
A
I
AR
E
AR
E
AS
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
26
A
40
mJ
1.2
J
dv/dt
I
S
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
T
J
≤
150
°
C, R
G
= 5
10
V/ns
P
D
T
C
= 25
°
C
460
W
T
J
T
JM
T
stg
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
1.6 mm (0.062 in.) from case for 10 s
Plastic body
300
250
°
C
°
C
M
d
Mounting torque (TO-3P&TO-247)
1.13/10 Nm/lb.in.
F
C
Mounting force (PLUS220)
11..65/2.5..15
N/lb
Weight
TO-3P
TO-248
5.5
6.0
5.0
4.0
g
g
g
g
TO-268
PLUS220 & PLUS220SMD
IXFH 26N60P
IXFQ 26N60P
IXFT 26N60P
IXFV 26N60P
IXFV 26N60PS
TO-268 (IXFT)
G
S
D (TAB)
TO-247 (IXFH)
G
S
D (TAB)
PLUS220SMD (IXFV_S)
G
S
D
PLUS220 (IXFV)
D (TAB)
Features
z
Fast Recovery diode
z
Unclamped Inductive Switching (UIS)
rated
z
International standard packages
z
Low package inductance
- easy to drive and to protect
Advantages
z
Easy to mount
z
Space savings
z
High power density
相關(guān)PDF資料
PDF描述
IXFV26N60P N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
IXFV26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
IXFR100N25 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓250V,導(dǎo)通電阻27mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET)
IXFR10N100Q N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances
IXFR12N100Q N-Channel Enhancement Mode Avalanche Rated, High dV/dt Low Gate Charge and Capacitances
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參數(shù)描述
IXFT26N60Q 功能描述:MOSFET 28 Amps 600V 0.25 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFT28N50F 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFT28N50Q 功能描述:MOSFET 28 Amps 500V 0.20W Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFT30N40Q 功能描述:MOSFET 30 Amps 400V 0.16 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFT30N50 功能描述:MOSFET 30 Amps 500V 0.16 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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