參數(shù)資料
型號： IXFN130N30
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓300V,導通電阻18mΩ的N溝道增強型HiPerFET功率MOSFET)
中文描述： 130 A, 300 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： MINIBLOC-4
文件頁數(shù)： 1/4頁
文件大小： 131K
代理商： IXFN130N30
1 - 4
2000 IXYS All rights reserved
Features
International standard packages
miniBLOC,
with Aluminium nitride
isolation
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GH(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
= 20 V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
= 10 V, I
= 0.5 I
D25
Pulse test, t 300 s,
duty cycle d 2 %
300
V
V
2
4
200
nA
T
J
= 25 C
T
J
= 125 C
100
A
2
mA
R
DS(on)
18
m
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
L(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
300
300
V
V
20
30
V
V
T
C
= 25 C
Terminal (current limit)
130
100
A
A
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
T
C
= 25 C
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
,
T
J
150 C, R
G
= 2
T
C
= 25 C
520
130
A
A
64
mJ
4
J
5
V/ns
P
D
T
J
T
JM
T
stg
V
ISOL
700
W
-55 ... +150
C
C
C
150
-55 ... +150
50/60 Hz, RMS
I
ISOL
1 mA
Mounting torque
Terminal connection torque
t = 1 min
t = 1 s
2500
3000
V~
V~
M
d
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
Weight
30
g
HiPerFET
TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
98531C (4/99)
D
S
G
S
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Advanced Technical Information
IXFN 130N30
V
DSS
= 300
I
D25
= 130
R
DS(on)
= 18 m
t
rr
<
V
A
250 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
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PDF描述
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