參數(shù)資料
型號： IXFN150N10
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： HiPerFET Power MOSFETs
中文描述： 150 A, 100 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： MINIBLOC-4
文件頁數(shù)： 1/2頁
文件大?。?/td> 70K
代理商： IXFN150N10
1 - 2
2000 IXYS All rights reserved
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
Features
International standard package
Encapsulating
epoxy
meets
UL
94
V-0, flammability classification
miniBLOC
with Aluminium nitride
isolation
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount
Space savings
High power density
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Symbol
(T
J
= 25 C, unless otherwise specified)
V
DSS
V
GS
= 0 V, I
D
= 3mA
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA
I
GSS
V
GS
= 20V, V
GS
= 0V
I
DSS
V
DS
= V
V
GS
= 0 V
R
DS(on)
V
= 10V, I
D
= 0.5 I
D25
Note 2
Test Conditions
Characteristic Values
Typ. Max.
Min.
150
V
2
4
V
100
nA
T
J
= 25 C
T
J
= 125 C
100
A
2
mA
12.5
m
98653 (9/99)
HiPerFET
TM
Power MOSFET
Single MOSFET Die
Symbol Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
L(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1M
Continuous
Transient
150
150
V
V
20
30
V
V
T
= 25 C
Terminal (current limit)
T
= 25 C; Note 1
T
C
= 25 C
T
C
= 25 C
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
T
J
150 C, R
G
= 2
T
C
= 25 C
150
100
600 A
150 A
A
A
60
3
mJ
J
5 V/ns
P
D
600
W
T
J
T
JM
T
stg
-55 ... +150
150
-55 ... +150
C
C
C
T
L
V
ISOL
1.6 mm (0.063 in) from case for 10 s
300
C
50/60 Hz, RMS
I
ISOL
1 mA
Mounting torque
Terminal connection torque
t = 1 min
t = 1 s
2500
3000
V~
V~
M
d
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
IXFN 150N15
V
DSS
I
D25
R
DS(on)
= 12.5 m
= 150 V
= 150 A
t
rr
250 ns
Preliminary data sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFN150N15 功能描述:MOSFET 150V 150A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN15N100 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 15A I(D) | SOT-227B
IXFN160N30T 功能描述:MOSFET TRENCH HIPERFET PWR MOSFET 300V 130A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN16N100 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs
IXFN170N10 功能描述:MOSFET 170 Amps 100V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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