參數(shù)資料
型號： IXFN200N07
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓70V,導通電阻6mΩ的N溝道增強型HiPerFET功率MOSFET)
中文描述： 200 A, 70 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： MINIBLOC-4
文件頁數(shù)： 1/4頁
文件大?。?/td> 188K
代理商： IXFN200N07
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25 C to 150 C
N07
N06
N07
N06
70
60
70
60
V
V
V
V
V
DGR
T
J
= 25 C to 150 C; R
GS
= 1 M
V
GS
V
GSM
I
D25
Continuous
Transient
20
30
V
V
T
C
= 25 C; Chip capability
200N06/200N07
180N07
200
180
100
A
A
A
I
L(RMS)
Terminal current limit
I
DM
I
AR
E
AR
E
AS
dv/dt
T
C
T
C
T
C
T
C
I
S
T
J
T
C
= 25 C
= 25 C, pulse width limited by T
JM
= 25 C
600
100
A
A
= 25 C
= 25 C
30
2
mJ
J
I
, di/dt 100 A/ s, V
DD
V
DSS
,
150 C, R
G
= 2
5
V/ns
P
D
T
J
T
JM
T
stg
V
ISOL
520
W
-55 ... +150
C
C
C
150
-55 ... +150
50/60 Hz, RMS
I
ISOL
1 mA
Mounting torque
Terminal connection torque
t = 1 min
t = 1 s
2500
3000
V~
V~
M
d
1.5/13Nm/lb.in.
1.5/13Nm/lb.in.
Weight
30
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1 mA
N06
N07
60
70
V
V
V
V
GS (th)
V
DS
= V
GS
, I
D
= 8 mA
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
I
V
DS
= 0.8 V
DSS
T
J
= 25 C
V
GS
= 0 V
T
J
= 125 C
R
V
= 10 V, I
= 0.5 I
Pulse test, t 300 s, duty cycle d 2 %
2
4
200
400
nA
A
mA
2
6 m
7 m
200N06/200N07
180N07
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
D = Drain
Features
International standard packages
miniBLOC with Aluminium nitride
isolation
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount
Space savings
High power density
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
97533A (9/99)
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
V
DSS
I
D25
R
DS(on)
IXFN 200 N06
IXFN 180 N07
IXFN 200 N07
60 V
70 V
70 V
200 A
180 A
200 A
6 m
7 m
6 m
t
rr
250 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
相關PDF資料
PDF描述
IXFN180N10 CAP 1200PF 100V 5% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
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IXFN180N20 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓200V,導通電阻10mΩ的N溝道增強型HiPerFET功率MOSFET)
IXFN21N100Q N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓1000V,導通電阻0.50Ω的N溝道增強型HiPerFET功率MOSFET)
相關代理商/技術參數(shù)
參數(shù)描述
IXFN200N10P 功能描述:MOSFET 200 Amps 100V 0.0075 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN20N120 功能描述:MOSFET 20 Amps 1200 V 0.75 Ohms Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN20N120P 功能描述:MOSFET 20 Amps 1200V 0.6 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN210N20P 功能描述:MOSFET 188 Amps 200V 0.0105 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN210N30P3 功能描述:MOSFET N-Channel: Power MOSFET w/Fast Diode RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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