參數資料
型號： IXFK26N90
廠商： IXYS CORP
元件分類： JFETs
英文描述： N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓900V,導通電阻0.30Ω的N溝道增強型HiPerFET功率MOSFET)
中文描述： 26 A, 900 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264
封裝： TO-264, 3 PIN
文件頁數： 1/4頁
文件大?。?/td> 116K
代理商： IXFK26N90
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
900
900
V
V
V
GS
V
GSM
Continuous
Transient
20
30
V
V
I
D25
T
C
= 25 C
26N90
25N90
26N90
25N90
26N90
25N90
26
25
A
I
DM
T
C
= 25 C, pulse width limited by T
JM
104
100
26
25
A
I
AR
T
C
= 25 C
A
E
AR
E
AS
T
C
= 25 C
T
C
= 25 C
64
3
mJ
J
dv/dt
I
S
T
J
I
, di/dt 100 A/ s, V
DD
V
DSS
150 C, R
G
= 2
5
V/ns
P
D
T
C
= 25 C
560
W
T
J
T
JM
T
stg
-55 ... +150
C
C
C
150
-55 ... +150
T
L
M
d
Weight
1.6 mm (0.063 in.) from case for 10 s
300
C
Mounting torque
TO-264
0.4/6
Nm/lb.in.
PLUS 247
TO-264
6
10 g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
900
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3mA
V
V
GS(th)
I
GSS
I
DSS
V
DS
= V
GS
, I
D
= 8mA
V
GS
= 20 V, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
= 10 V, I
D
= 0.5 I
D25
Note 1
3.0
5.0
200
100
V
nA
A
mA
T
J
= 25 C
T
J
= 125 C
26N90
25N90
2
R
DS(on)
0.3
0.33
Single MOSFET Die
Features
International standard packages
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and ighting controls
Advantages
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
HiPerFET
TM
Power MOSFETs
98553D (9/99)
PLUS 247
TM
(IXFX)
G
D
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
S
G
D
(TAB)
TO-264 AA (IXFK)
V
DSS
900 V 26 A 0.30
900 V 25 A 0.33
I
DSS
R
DS(on)
t
rr
250 ns
250 ns
IXFK/IXFX 26N90
IXFK/IXFX 25N90
Preliminary data sheet
S
IXYS reserves the right to change limits, test conditions, and dimensions.
相關PDF資料
PDF描述
IXFK27N80Q HiPerFET Power MOSFETs Q-CLASS
IXFR27N80Q HiPerFET Power MOSFETs Q-CLASS
IXFX27N80Q HiPerFET Power MOSFETs Q-CLASS
IXFK27N80 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓800V,導通電阻0.30Ω的N溝道增強型HiPerFET功率MOSFET)
IXFK28N60 HiPerFET Power MOSFETs
相關代理商/技術參數
參數描述
IXFK27N80 功能描述:MOSFET 800V 27A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK27N80Q 功能描述:MOSFET 27 Amps 800V 0.32 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK27N80Q_02 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs Q-CLASS
IXFK28N60 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs
IXFK30N100Q2 功能描述:MOSFET 30 Amps 1000V 0.35 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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