參數(shù)資料
型號： IXFR27N80Q
廠商： IXYS CORP
元件分類： JFETs
英文描述： HiPerFET Power MOSFETs Q-CLASS
中文描述： 27 A, 800 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： ISOPLUS247, 3 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 55K
代理商： IXFR27N80Q
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
800
800
V
V
V
GS
V
GSM
Continuous
Transient
20
30
V
V
I
D25
I
DM
I
AR
T
C
= 25 C
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
27
A
A
A
108
27
E
AR
E
AS
dv/dt
T
C
= 25 C
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
T
J
150 C, R
G
= 2
T
C
= 25 C
60
2.5
mJ
J
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
500
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 s
300
C
Mounting torque
TO-264
0.4/6
Nm/lb.in.
PLUS 247/ISOPLUS 247
TO-264
6
10 g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
800
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250uA
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 4mA
V
GS
= 20 V, V
DS
= 0
2.0
4.5 V
100 nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
V
= 10 V, I
D
= 0.5 I
D25
Note 1
100 A
2 mA
300 m
T
J
= 125 C
R
DS(on)
98722 (05/22/00)
PLUS 247
TM
(IXFX)
G
D
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
V
DSS
I
D25
R
DS(on)
= 300 m
= 800 V
=
27 A
t
rr
250 ns
S
G
D
(TAB)
TO-264 AA (IXFK)
HiPerFET
TM
Power MOSFETs
Q-CLASS
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dV/dt, Low t
rr
Features
IXYS advanced low Q
process
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
Rated for unclamped Inductive load
switching (UIS) rated
Molding epoxies meet UL 94 V-0
flammability classification
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and ighting controls
Advantages
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
IXFK 27N80Q
IXFR 27N80Q
IXFX 27N80Q
G
D
Isolated back surface*
ISOPLUS 247
TM
(IXFR)
E153432
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料
PDF描述
IXFX27N80Q HiPerFET Power MOSFETs Q-CLASS
IXFK27N80 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓800V,導(dǎo)通電阻0.30Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET)
IXFK28N60 HiPerFET Power MOSFETs
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IXFK35N50 HiPerFET Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFR30N110P 功能描述:MOSFET 30 Amps 1100V 0.4000 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR30N50 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs ISOPLUS247
IXFR30N50Q 功能描述:MOSFET 30 Amps 500V 0.16 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR30N60P 功能描述:MOSFET 600V 30A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFR32N100P 功能描述:MOSFET 32 Amps 1000V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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