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參數(shù)資料
| 型號： | IXFK27N80 |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓800V,導(dǎo)通電阻0.30Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET) |
| 中文描述： | 27 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | TO-264AA, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 151K |
| 代理商： | IXFK27N80 |
1 - 4
2000 IXYS All rights reserved
TO-264 AA (IXFK)
S
G
D
D
S
G
S
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
(TAB)
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
D = Drain
TAB = Drain
Features
International standard packages
JEDEC
TO-264 AA,
epoxy
meet
UL
94
V-0, flammability classification
miniBLOC,
with Aluminium nitride
isolation
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3 mA
V
DSS
temperature coefficient
V
DS
= V
GS
, I
D
= 8 mA
V
GS(th)
temperature coefficient
800
V
0.096
%/K
V
%/K
V
GH(th)
2
4.5
-0.214
I
GSS
I
DSS
V
GS
= 20 V
DC
, V
DS
= 0
V
DS
= 0.8 V
DSS
V
GS
= 0 V
V
= 10 V, I
= 0.5 I
D25
Pulse test, t 300 s,
duty cycle d 2 %
200
nA
T
J
= 25 C
T
J
= 125 C
500
2
A
mA
R
DS(on)
25N80
27N80
0.35
0.30
Symbol
Test Conditions
Maximum Ratings
IXFK
IXFN
V
DSS
V
DGR
V
GS
V
GSM
I
D25
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
800
800
800
800
V
V
20
30
20
30
V
V
T
C
= 25 C, Chip capability
27N80
25N80
27N80
25N80
27N80
25N80
27
25
108
100
14
13
27
25
108
100
14
13
A
A
A
A
A
A
I
DM
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
I
AR
E
AR
dv/dt
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
,
T
J
150 C, R
G
= 2
T
C
= 25 C
30
30
mJ
5
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
500
520
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.063 in) from case for 10 s
300
-
C
50/60 Hz, RMS
I
ISOL
1 mA
Mounting torque
Terminal connection torque
t = 1 min
t = 1 s
-
-
2500
3000
V~
V~
M
d
0.9/6
1.5/13
1.5/13
Nm/lb.in.
Nm/lb.in.
-
Weight
10
30
g
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
95561C (3/98)
V
DSS
800 V
800 V
800 V
800 V
I
D25
27 A
25 A
27 A
25 A
R
DS(on)
0.30
0.35
0.30
0.35
IXFK 27N80
IXFK 25N80
IXFN 27N80
IXFN 25N80
IXYS reserves the right to change limits, test conditions, and dimensions.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXFK27N80Q | 功能描述:MOSFET 27 Amps 800V 0.32 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFK27N80Q_02 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs Q-CLASS |
| IXFK28N60 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs |
| IXFK30N100Q2 | 功能描述:MOSFET 30 Amps 1000V 0.35 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFK30N100Q2_08 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs Q2-Class |
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