參數(shù)資料
型號(hào): IXFK27N80
廠商: IXYS CORP
元件分類: 功率晶體管
英文描述: N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓800V,導(dǎo)通電阻0.30Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET)
中文描述: 27 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝: TO-264AA, 3 PIN
文件頁數(shù): 3/4頁
文件大小: 151K
代理商: IXFK27N80
3 - 4
2000 IXYS All rights reserved
I
D
- Amperes
0
10
20
30
40
50
R
D
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
V
GS
- Volts
2
3
4
5
6
7
I
D
0
5
10
15
20
25
30
T
C
- Degrees C
-50
-25
0
25
50
75
100 125 150
I
D
0
5
10
15
20
25
30
T
J
- Degrees C
25
50
75
100
125
150
R
D
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
V
DS
- Volts
0
4
8
12
16
20
I
D
0
10
20
30
40
V
DS
- Volts
0
2
4
6
8
10
I
D
0
10
20
30
40
4V
V
GS
= 10V
V
GS
= 9V
8V
7V
6V
T
J
= 125
O
C
V
GS
= 10V
T
J
= 25
O
C
5V
5V
4V
T
J
= 25
o
C
I
D
= 27A
T
J
= 25
O
C
IXFK27N80
IXFN27N80
T
J
= 125
o
C
V
GS
= 9V
8V
7V
6V
T
J
= 125
O
C
IXF_25N80
I
D
= 13.5A
IXFK 25N80
IXFN 25N80
IXFK 27N80
IXFN 27N80
Figure 3. R
DS(on)
normalized to 0.5 I
D25
value
vs. I
D
Figure 5. Drain Current vs. Case Temperature
Figure 6. Admittance Curves
Figure 1. Output Characteristics at 25
O
C
Figure 2. Output Characteristics at
125
O
C
Figure 4. R
DS(on)
normalized to 0.5 I
D25
value vs. T
J
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