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參數(shù)資料
| 型號： | ISL12022MAIBZ |
| 廠商： | Intersil |
| 文件頁數(shù)： | 28/31頁 |
| 文件大小： | 0K |
| 描述： | IC RTC/CALENDAR TEMP SNSR 20SOIC |
| 產(chǎn)品培訓(xùn)模塊： | Solutions for Industrial Control Applications |
| 標(biāo)準(zhǔn)包裝： | 38 |
| 類型： | 時鐘/日歷 |
| 特點： | 警報器，夏令時，閏年，SRAM |
| 存儲容量： | 128B |
| 時間格式： | HH:MM:SS（12/24 小時） |
| 數(shù)據(jù)格式： | YY-MM-DD-dd |
| 接口： | I²C，2 線串口 |
| 電源電壓： | 2.7 V ~ 5.5 V |
| 電壓 - 電源，電池： | 1.8 V ~ 5.5 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 20-SOIC（0.295"，7.50mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 20-SOIC |
| 包裝： | 管件 |
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ISL12022MA
6
FN7575.5
September 5, 2012
Absolute Maximum Ratings
Thermal Information
Voltage on VDD, VBAT and IRQ/FOUT pins
(Respect to Ground) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 6.0V
Voltage on SCL and SDA pins
(Respect to Ground) . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VDD +0.3V
ESD Rating
Human Body Model (Per JESD22-A114F) . . . . . . . . . . . . . . . . . . . . . . >3kV
Machine Model (Per JESD22-A115B) . . . . . . . . . . . . . . . . . . . . . . . . >300V
Charge Device Model (Per JESD22-C101D) . . . . . . . . . . . . . . . . . . . .2.2kV
Latch Up (Tested per JESD-78B; Class 2, Level A) . . . . . . . . . . . . . . 100mA
Shock Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . 5000g, 0.3ms, 1/2 sine
Vibration (Ultrasound cleaning not advised) . . . . . . . . . . . 20g/10-2000Hz,
Thermal Resistance (Typical)
θJA (°C/W) θJC (°C/W)
20 Lead SOIC (Notes 4, 5). . . . . . . . . . . . . .
70
35
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40°C to +85°C
Pb-Free Reflow Profile (Note 6). . . . . . . . . . . . . . . . . . . . . . . . see link below
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
4.
θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
5. For
θJC, the “case temp” location is on top of the package and measured in the center of the package between pins 6 and 15.
6. The ISL12022MA Oscillator Initial Accuracy can change after solder reflow attachment. The amount of change will depend on the reflow temperature
and length of exposure. A general rule is to use only one reflow cycle and keep the temperature and time as short as possible. Changes on the order
of ±1ppm to ±3ppm can be expected with typical reflow profiles.
DC Operating Characteristics RTC Test Conditions: VDD = +2.7 to +5.5V, TA = -40°C to +85°C, unless otherwise stated. Boldface
limits apply over the operating temperature range, -40°C to +85°C.
SYMBOL
PARAMETER
CONDITIONS
MIN
(Note 7)
TYP
(Note 8)
MAX
(Note 7)
UNITS
NOTES
VDD
Main Power Supply
(Note 15)
2.7
5.5
V
VBAT
Battery Supply Voltage
(Note 15)
1.8
5.5
IDD1
Supply Current. (I2CNot Active,
Temperature Conversion Not Active, FOUT
Not Active)
VDD = 5V
4.1
15
A
VDD = 3V
3.5
14
A
IDD2
Supply Current. (I2C Active, Temperature
Conversion Not Active, Fout Not Active)
VDD = 5V
200
500
A
IDD3
Supply Current. (I2CNot Active,
Temperature Conversion Active, FOUT Not
Active)
VDD = 5V
120
400
A
IBAT
Battery Supply Current
VDD = 0V, VBAT = 3V, TA = +25°C
1.0
1.6
A
VDD = 0V, VBAT = 3V
1.0
5.0
A
IBATLKG
Battery Input Leakage
VDD = 5.5V, VBAT = 1.8V
100
nA
ILI
Input Leakage Current on SCL
VIL = 0V, VIH = VDD
-1.0
±0.1
1.0
A
ILO
I/O Leakage Current on SDA
VIL = 0V, VIH = VDD
-1.0
±0.1
1.0
A
VBATM
Battery Level Monitor Threshold
-100
+100
mV
VPBM
Brownout Level Monitor Threshold
-100
+100
mV
VTRIP
VBAT Mode Threshold
(Note 15)
2.0
2.2
2.4
V
VTRIPHYS VTRIP Hysteresis
30
mV
VBATHYS
VBAT Hysteresis
50
mV
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