參數(shù)資料
型號: IRGB430
廠商: International Rectifier
英文描述: INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15A)
中文描述: 絕緣柵雙極晶體管(VCES和\u003d的500V,@和VGE \u003d 15V的,集成電路\u003d 15A條)
文件頁數(shù): 7/8頁
文件大?。?/td> 425K
代理商: IRGB430
C-631
Fig. 14
- Typical Reverse Recovery vs. di
f
/dt
Fig. 15
- Typical Recovery Current vs. di
f
/dt
Fig. 16
- Typical Stored Charge vs. di
f
/dt
Fig. 17
- Typical di
(rec)M
/dt vs. di
f
/dt
IRGB430UD2
0
200
400
600
100
1000
di /dt - (A/μs)
R
Q
I = 6.0A
I = 12A
I = 24A
V = 200V
T = 125°C
T = 25°C
10
100
1000
10000
100
1000
di /dt - (A/μs)
d
I = 12A
I = 24A
I = 6.0A
V = 200V
T = 125°C
T = 25°C
0
40
80
120
160
100
1000
dif
t
r
I = 24A
I = 12A
I = 6.0A
V = 200V
T = 125°C
T = 25°C
1
10
100
100
1000
di /dt - (A/μs)
I
I
I = 6.0A
I = 12A
I = 24A
V = 200V
T = 125°C
T = 25°C
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