參數(shù)資料
型號(hào): IRGB430
廠商: International Rectifier
英文描述: INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15A)
中文描述: 絕緣柵雙極晶體管(VCES和\u003d的500V,@和VGE \u003d 15V的,集成電路\u003d 15A條)
文件頁(yè)數(shù): 5/8頁(yè)
文件大?。?/td> 425K
代理商: IRGB430
C-629
IRGB430UD2
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Case Temperature
1.03
1.06
1.09
1.12
1.15
0
10
20
30
40
50
60
T
R , Gate Resistance (
)
A
V = 400V
V = 15V
T = 25°C
I = 15A
0.1
1
10
-60
-40
-20
T , Case Temperature (°C)
0
20
40
60
80
100
120 140
160
T
A
R = 23
V = 15V
V = 400V
I = 30A
I = 15A
I = 7.5A
0
200
400
600
800
1000
1200
1400
1
10
100
C
V , Collector-to-Emitter Voltage (V)
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
C
ies
C
res
C
oes
0
4
8
12
16
20
0
10
20
30
40
G
V
Q , Total Gate Charge (nC)
V = 400V
I = 15A
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