參數(shù)資料
型號(hào)： IRGB430
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=15A)
中文描述： 絕緣柵雙極晶體管（VCES和\u003d的500V，@和VGE \u003d 15V的，集成電路\u003d 15A條）
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 425K
代理商： IRGB430
C-626
Parameter
Q
g
Total Gate Charge (turn-on)
Qge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
ts
Total Switching Loss
L
E
Internal Emitter Inductance
C
ies
Input Capacitance
C
oes
Output Capacitance
C
res
Reverse Transfer Capacitance
t
rr
Diode Reverse Recovery Time
Min. Typ. Max. Units
—-
31
—-
6.2
—-
12
—-
73
—-
72
—-
120
—-
100
—-
0.7
—-
0.4
—-
1.1
—-
77
—-
75
—-
200
—-
190
—-
1.5
—-
7.5
—-
660
—-
110
—-
12
—-
42
—-
80
—-
3.5
—-
5.6
—-
80
—-
220
—-
180
—-
120
Conditions
47
9.2
19
—-
—-
180
150
—-
—-
1.7
—-
—-
—-
—-
—-
—-
—-
—-
—-
60
120
6.0
10
180
600
—-
—-
I
C
= 15A
V
CC
= 400V
See Fig. 8
T
J
= 25°C
I
C
= 15A, V
CC
= 400V
V
GE
= 15V, R
G
= 23
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 11, 18
nC
ns
mJ
T
J
= 150°C, See Fig. 9, 10, 11, 18
I
C
= 15A, V
CC
= 400V
V
GE
= 15V, R
G
= 23
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
T
J
= 25°C See Fig.
T
J
= 125°C 14 I
F
= 12A
T
J
= 25°C See Fig.
T
J
= 125°C 15 V
R
= 200V
T
J
= 25°C See Fig.
T
J
= 125°C 16 di/dt = 200A/μs
T
J
= 25°C See Fig.
T
J
= 125°C 17
ns
mJ
nH
pF
See Fig. 7
ns
I
rr
Diode Peak Reverse Recovery Current
A
Q
rr
Diode Reverse Recovery Charge
nC
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
During t
b
A/μs
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temp. Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
500
—-
—-
0.46
—-
2.3
—-
2.8
—-
2.6
3.0
—-
—-
-11
2.3
8.1
—-
—-
—-
—-
2500
—-
1.4
—-
1.3
—-
—-
±100
Conditions
—-
—-
3.0
—-
—-
5.5
—-
—-
250
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0mA
I
C
= 15A
I
C
= 25A
I
C
= 15A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
V
CE
= V
GE
, I
C
= 250μA
V
CE
= 100V, I
C
= 15A
V
GE
= 0V, V
CE
= 500V
V
GE
= 0V, V
CE
= 500V, T
J
= 150°C
I
C
= 12A
I
C
= 12A, T
J
= 150°C
V
GE
= ±20V
V/°C
V
GE
= 15V
See Fig. 2, 5
V
V
GE(th)
V
GE(th)
/
T
J
g
fe
I
CES
Gate Threshold Voltage
Temp. Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
mV/°C
S
μA
V
FM
Diode Forward Voltage Drop
1.7
1.6
V
See Fig. 13
I
GES
Gate-to-Emitter Leakage Current
nA
IRGB430UD2
Pulse width
≤
80μs; duty factor
≤
0.1%.
V
CC
=80%(V
CES
), V
GE
=20V, L=10μH,
R
G
= 23
, ( See fig. 19 )
Pulse width 5.0μs,
single shot.
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Repetitive rating; V
GE
=20V, pulse width
limited by max. junction temperature.
( See fig. 20 )
Notes:
Next Data Sheet
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