參數(shù)資料
型號： IRGB6B60KPBF
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR
中文描述： 絕緣柵雙極晶體管
文件頁數(shù)： 1/14頁
文件大?。?/td> 300K
代理商： IRGB6B60KPBF
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
0.50
–––
–––
1.44
Max.
1.4
–––
62
40
–––
Units
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Wt
www.irf.com
Junction-to-Case - IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, steady state)
Weight
°C/W
g
Parameter
Max.
600
13
7.0
26
26
± 20
90
36
Units
V
A
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
V
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
INSULATED GATE BIPOLAR TRANSISTOR
Features
Low VCE (on) Non Punch Through IGBT Technology.
10μs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Lead-Free.
11/18/04
Absolute Maximum Ratings
Benefits
Benchmark Efficiency for Motor Control.
1
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation.
Thermal Resistance
IRGB6B60KPbF
IRGS6B60KPbF
IRGSL6B60KPbF
V
CES
= 600V
I
C
= 7.0A, T
C
=100°C
t
sc
> 10μs, T
J
=150°C
V
CE(on)
typ. = 1.8V
E
C
G
n-channel
D
2
Pak
IRGS6B60K
TO-220AB
IRGB6B60K
TO-262
IRGSL6B60K
相關(guān)PDF資料
PDF描述
IRGB8B60KPbF INSULATED GATE BIPOLAR TRANSISTOR
IRGB8B60K INSULATED GATE BIPOLAR TRANSISTOR
IRGS8B60K INSULATED GATE BIPOLAR TRANSISTOR
IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR
IRGBC20K Aluminum Screw Terminal Permissable Abnormal Voltage Capacitor; Capacitance: 4700uF; Voltage: 400V; Case Size: 76.2x110 mm; Packaging: Bulk
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRGB8B60K 制造商:International Rectifier 功能描述:IGBT TO-220AB
IRGB8B60KPBF 功能描述:IGBT 晶體管 600V UltraFast 10-30kHz RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
IRGBC20 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A)
IRGBC20F 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A)
IRGBC20FD2 制造商:IRF 制造商全稱:International Rectifier 功能描述:IRGBC20FD2
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