參數(shù)資料
型號(hào)： IRGSL8B60K
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR
中文描述： 絕緣柵雙極晶體管
文件頁(yè)數(shù)： 1/13頁(yè)
文件大?。?/td> 468K
代理商： IRGSL8B60K
10/16/03
www.irf.com
1
INSULATED GATE BIPOLAR TRANSISTOR
Features
Low VCE (on) Non Punch Through IGBT Technology.
10μs Short Circuit Capability.
Square RBSOA.
Positive VCE (on) Temperature Coefficient.
Benefits
Benchmark Efficiency for Motor Control.
Rugged Transient Performance.
Low EMI.
Excellent Current Sharing in Parallel Operation.
IRGB8B60K
IRGS8B60K
IRGSL8B60K
V
CES
= 600V
I
C
= 20A, T
C
=100°C
t
sc
>10μs, T
J
=150°C
V
CE(on)
typ. = 1.8V
E
C
G
n-channel
Absolute Maximum Ratings
Parameter
Max.
600
28
19
56
56
±20
167
83
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C Maximum Power Dissipation
T
J
Operating Junction and
T
STG
Storage Temperature Range
Storage Temperature Range, for 10 sec.
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
Clamped Inductive Load current
Gate-to-Emitter Voltage
Maximum Power Dissipation
A
V
W
-55 to +175
°C
300 (0.063 in. (1.6mm) from case)
Thermal / Mechanical Characteristics
Parameter
Min.
–––
–––
–––
–––
–––
Typ.
–––
0.50
–––
–––
1.44
Max.
0.90
–––
62
40
–––
Units
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Junction-to-Case- IGBT
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Junction-to-Ambient (PCB Mount, Steady State)
°C/W
Weight
g
PD - 94545C
D
2
Pak
IRGS8B60K
TO-220AB
IRGB8B60K
TO-262
IRGSL8B60K
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