參數(shù)資料
型號(hào)： IRFP440B
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 500V N-Channel MOSFET
中文描述： 8.5 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-3P, 3 PIN
文件頁數(shù)： 1/8頁
文件大?。?/td> 689K
代理商： IRFP440B
2001 Fairchild Semiconductor Corporation
November 2001
Rev. B, November 2001
I
IRFP440B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
power factor correction and electronic lamp ballasts based
on half bridge.
Features
8.5A, 500V, R
DS(on)
= 0.8
@V
GS
= 10 V
Low gate charge ( typical 41 nC)
Low Crss ( typical 35 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
IRFP440B
500
8.5
5.4
34
±
30
320
8.5
16.2
5.5
162
1.3
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
Typ
--
0.24
--
Max
0.77
--
40
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
●
●
●
●
●
▲
!
!
S
!
!
!
D
G
TO-3P
IRFP Series
G
S
D
相關(guān)PDF資料
PDF描述
IRFP450A N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管（漏源電壓為500V，導(dǎo)通電阻為0.4Ω，漏電流為14A）)
IRFP450B 500V N-Channel MOSFET
IRFP450 N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管（漏源電壓為500V，導(dǎo)通電阻為0.4Ω，漏電流為14A）)
IRFP460 N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管（漏源電壓為500V，導(dǎo)通電阻為0.25Ω，漏電流為22A）)
IRFR014 N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管（漏源電壓為60V，導(dǎo)通電阻為0.14Ω，漏電流為8.2A）)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFP440PBF 功能描述:MOSFET N-Chan 500V 8.8 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP440R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8.8A I(D) | TO-247
IRFP441 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 8.1A I(D) | TO-247AC
IRFP4410ZPBF 功能描述:MOSFET MOSFT 100V 97A 9mOhm 83nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFP441R 制造商:Harris Corporation 功能描述:
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購

我的聯(lián)系方式

*
*
*